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參數(shù)資料
| 型號： | IDTAMB0480 |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM MODULES |
| 中文描述： | 高級內(nèi)存緩沖的全緩沖DIMM模塊 |
| 文件頁數(shù)： | 12/15頁 |
| 文件大?。?/td> | 264K |
| 代理商： | IDTAMB0480 |
12
COMMERCIAL TEMPERATURE RANGE
IDTAMB0480
ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM
Symbol
V
DD
V
IN
(DDR2).
V
OUT
(DDR2)
pin relative to Vss
(2)
I
INK
Input Clamp Current
(V
IN
< 0 or V
IN
> V
DD
)
I
OUTK
Output Clamp Current
(V
OUT
< 0 or V
OUT
> V
DD
)
I
OUT
Continous Output Current
(V
OUT
= 0 to V
DD
)
N/A
Continuous current through
each V
DD
or GND
V
CC
Supply voltage for Core
and High Speed Interface
T
J
Junction Temperature
T
STG
Storage Temperature Range
Description
Mn
-0.5
0.5
Max
+2.3
+2.3
Unit
V
V
Supply voltage DRAMInterface
Voltage on any DDR2 interface
+30
mA
+30
mA
+30
mA
+100
mA
-0.3
+1.75
V
+125
+100
°C
°C
–55
ABSOLUTE MAX IMUM RATINGS
(1)
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUMRATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximumrating
conditions for extended periods may affect reliability.
2. The input and output negative-voltage ratings may be exceeded if the input and output
clamp-current ratings are observed. This value is limted to 2.3V maximum
ADVANCED MEMORY BUFFER
NORMAL MODE DC ELECTRICAL
PARAMETERS
Parameter
V
CC
link / core
(1,2,3,4)
V
DD
V
DDSPD
Mn
1.425
1.7
3.0
Typ
1.5
1.8
3.3
Max
1.59
1.9
3.6
Unit
V
V
V
NOTES:
1. AMB 1.5V voltage regulation as measured at the package Balls.
2. DC defined as 0 KHz to 30 KHz.
3. DC + AC specified as 1.5V +6%, -5% 30KHz to 1 MHz.
4. There is also a +7%, -5% tolerance allowed for current load steps associated with
initialization/error-recovery state transitions, such as into and out of EI, IBIST, and
MEMBIST. For these transitions, a temporary voltage overshoot is expected and
acceptable as long as it is within +7% (step transition for 20
μ
s
and maximumduty cycle
of 10
-6
%). Transitions between Active and Idle states are not included in this +7%,
-5% tolerance.
ELECTRICAL, POWER, AND THERMAL
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| IDTAMB0480A5RJ | 功能描述:IC MEMORY BUFFER ADV DIMM 655BGA RoHS:否 類別:集成電路 (IC) >> 邏輯 - 專用邏輯 系列:- 產(chǎn)品變化通告:Product Discontinuation 25/Apr/2012 標準包裝:1,500 系列:74SSTV 邏輯類型:DDR 的寄存緩沖器 電源電壓:2.3 V ~ 2.7 V 位數(shù):14 工作溫度:0°C ~ 70°C 安裝類型:表面貼裝 封裝/外殼:48-TFSOP（0.240"，6.10mm 寬） 供應(yīng)商設(shè)備封裝:48-TSSOP 包裝:帶卷 (TR) |
| IDTAMB0480A5RJ8 | 功能描述:IC MEMORY BUFFER ADV DIMM 655BGA RoHS:否 類別:集成電路 (IC) >> 邏輯 - 專用邏輯 系列:- 產(chǎn)品變化通告:Product Discontinuation 25/Apr/2012 標準包裝:1,500 系列:74SSTV 邏輯類型:DDR 的寄存緩沖器 電源電壓:2.3 V ~ 2.7 V 位數(shù):14 工作溫度:0°C ~ 70°C 安裝類型:表面貼裝 封裝/外殼:48-TFSOP（0.240"，6.10mm 寬） 供應(yīng)商設(shè)備封裝:48-TSSOP 包裝:帶卷 (TR) |
| IDTAMB0482C1RJ | 功能描述:IC MEMORY BUFFER ADV DIMM 655BGA RoHS:否 類別:集成電路 (IC) >> 接口 - 信號緩沖器，中繼器，分配器 系列:* 標準包裝:160 系列:- 類型:轉(zhuǎn)發(fā)器 Tx/Rx類型:以太網(wǎng) 延遲時間:- 電容 - 輸入:- 電源電壓:2.37 V ~ 2.63 V 電流 - 電源:60mA 安裝類型:表面貼裝 封裝/外殼:64-TQFP 裸露焊盤 供應(yīng)商設(shè)備封裝:64-TQFP-EP（10x10） 包裝:托盤 其它名稱:Q5134101 |
| IDTAMB0482C1RJ8 | 功能描述:IC MEMORY BUFFER ADV DIMM 655BGA RoHS:否 類別:集成電路 (IC) >> 接口 - 信號緩沖器，中繼器，分配器 系列:* 標準包裝:160 系列:- 類型:轉(zhuǎn)發(fā)器 Tx/Rx類型:以太網(wǎng) 延遲時間:- 電容 - 輸入:- 電源電壓:2.37 V ~ 2.63 V 電流 - 電源:60mA 安裝類型:表面貼裝 封裝/外殼:64-TQFP 裸露焊盤 供應(yīng)商設(shè)備封裝:64-TQFP-EP（10x10） 包裝:托盤 其它名稱:Q5134101 |
| IDTAMB0483D0RJ | 功能描述:IC MEMORY BUFFER ADV DIMM 655BGA RoHS:否 類別:集成電路 (IC) >> 接口 - 信號緩沖器，中繼器，分配器 系列:* 標準包裝:160 系列:- 類型:轉(zhuǎn)發(fā)器 Tx/Rx類型:以太網(wǎng) 延遲時間:- 電容 - 輸入:- 電源電壓:2.37 V ~ 2.63 V 電流 - 電源:60mA 安裝類型:表面貼裝 封裝/外殼:64-TQFP 裸露焊盤 供應(yīng)商設(shè)備封裝:64-TQFP-EP（10x10） 包裝:托盤 其它名稱:Q5134101 |
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