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參數(shù)資料
| 型號： | IDTAMB0480 |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM MODULES |
| 中文描述： | 高級內(nèi)存緩沖的全緩沖DIMM模塊 |
| 文件頁數(shù)： | 10/15頁 |
| 文件大?。?/td> | 264K |
| 代理商： | IDTAMB0480 |
10
COMMERCIAL TEMPERATURE RANGE
IDTAMB0480
ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM
PIN DESCRIPTION
Signal
Channel Interface
PN[13:0]
PN
[13:0]
SN[13:0]
Type
Description
O
O
I
Northbound Output Data: High speed serial signal. Read path fromAMB toward host on primary side of the DIMM connector.
Northbound Output Data Complement
Northbound Input Data: High speed serial signal. Read path fromthe previous AMB toward this AMB on secondary side of the DIMM
connector.
Northbound Input Data Complement
Southbound Input Data: High speed serial signal. Write path fromhost toward AMB on primary side of the DIMM connector.
Southbound Input Data Complement
Southbound Output Data: High speed serial signal. Write path fromthis AMB toward next AMB on secondary side of the DIMMconnector.
These output buffers are disabled for the last AMB on the channel.
Southbound Output Data Complement
External 100
Ω
precision resistor connected to V
CC
. On-die termnation calibrated against this resistor.
SN
[13:0]
PS[9:0]
PS
[9:0]
SS[9:0]
I
I
I
O
SS
[9:0]
FBDRES
O
A
DRAMInterface
CB[7:0]
DQ[63:0]
DQS[17:0]
DQS
[17:0]
A0A-A15A,
A0B-A15B
BA0A-BA2A,
BA0B-BA2B
RASA
,
RASB
CASA
,
CASB
WEA
,
WEB
CS
0A-
CS
1A,
CS
0B-
CS
1B
I/O
I/O
I/O
I/O
O
Check bits
Data
Data Strobe: DDR2 data and check-bit strobe.
Data Strobe Complement: DDR2 data and check-bit strobe complements.
Address: Used for providing multiplexed row and column address to SDRAM.
O
Bank Active: Used to select the bank within a rank.
O
O
O
O
Row Address Strobe: Used with
CS
,
CAS
, and
WE
to specify the SDRAM command.
Column Address Strobe: Used with
CS
,
RAS
, and
WE
to specify the SDRAM command.
Write Enable: Used with
CS
,
CAS
, and
RAS
to specify the SDRAM command.
Chip Select: Used with
CAS
,
RAS
, and
WE
to specify the SDRAM command. These signals are used for selecting one of two SDRAM
ranks.
CS0
is used to select the first rank and
CS1
is used to select the second rank.
Clock Enable: DIMM command register enable.
CKE0A-CKE1A,
CKE0B-CKE1B
ODT0A, ODT0B
CLK[3:0]
CLK
[3:0]
DDR Compensation
DDRC_C14
DDRC_B18
DDRC_C18
DDRC_B12
DDRC_C12
O
O
O
O
DIMM On-Die-Termnation: Dynamc ODT enables for each DIMM on the channel.
Clock: Clocks to DRAMs. CLK0 and CLK1 are always used. CLK2 and CLK3 are used when the AMB is configured for dual rank DIMMs.
Clock Complement: Clocks to DRAMs.
A
A
A
A
A
DDR Compensation Common: Common return (ground) pin for DDRC_B18 and DDRC_C18
DDR Compensation Ball Resistor (825
Ω
) connected to Compensation Common above
DDR Compensation Ball Resistor (121
Ω
) connected to Compensation Common above
DDR Compensation Ball Resistor (82
Ω
) connected to V
SS
DDR Compensation Ball Resistor (82
Ω
) connected to V
DD
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDTAMB0480A5RJ | 功能描述:IC MEMORY BUFFER ADV DIMM 655BGA RoHS:否 類別:集成電路 (IC) >> 邏輯 - 專用邏輯 系列:- 產(chǎn)品變化通告:Product Discontinuation 25/Apr/2012 標(biāo)準(zhǔn)包裝:1,500 系列:74SSTV 邏輯類型:DDR 的寄存緩沖器 電源電壓:2.3 V ~ 2.7 V 位數(shù):14 工作溫度:0°C ~ 70°C 安裝類型:表面貼裝 封裝/外殼:48-TFSOP（0.240"，6.10mm 寬） 供應(yīng)商設(shè)備封裝:48-TSSOP 包裝:帶卷 (TR) |
| IDTAMB0480A5RJ8 | 功能描述:IC MEMORY BUFFER ADV DIMM 655BGA RoHS:否 類別:集成電路 (IC) >> 邏輯 - 專用邏輯 系列:- 產(chǎn)品變化通告:Product Discontinuation 25/Apr/2012 標(biāo)準(zhǔn)包裝:1,500 系列:74SSTV 邏輯類型:DDR 的寄存緩沖器 電源電壓:2.3 V ~ 2.7 V 位數(shù):14 工作溫度:0°C ~ 70°C 安裝類型:表面貼裝 封裝/外殼:48-TFSOP（0.240"，6.10mm 寬） 供應(yīng)商設(shè)備封裝:48-TSSOP 包裝:帶卷 (TR) |
| IDTAMB0482C1RJ | 功能描述:IC MEMORY BUFFER ADV DIMM 655BGA RoHS:否 類別:集成電路 (IC) >> 接口 - 信號緩沖器，中繼器，分配器 系列:* 標(biāo)準(zhǔn)包裝:160 系列:- 類型:轉(zhuǎn)發(fā)器 Tx/Rx類型:以太網(wǎng) 延遲時間:- 電容 - 輸入:- 電源電壓:2.37 V ~ 2.63 V 電流 - 電源:60mA 安裝類型:表面貼裝 封裝/外殼:64-TQFP 裸露焊盤 供應(yīng)商設(shè)備封裝:64-TQFP-EP（10x10） 包裝:托盤 其它名稱:Q5134101 |
| IDTAMB0482C1RJ8 | 功能描述:IC MEMORY BUFFER ADV DIMM 655BGA RoHS:否 類別:集成電路 (IC) >> 接口 - 信號緩沖器，中繼器，分配器 系列:* 標(biāo)準(zhǔn)包裝:160 系列:- 類型:轉(zhuǎn)發(fā)器 Tx/Rx類型:以太網(wǎng) 延遲時間:- 電容 - 輸入:- 電源電壓:2.37 V ~ 2.63 V 電流 - 電源:60mA 安裝類型:表面貼裝 封裝/外殼:64-TQFP 裸露焊盤 供應(yīng)商設(shè)備封裝:64-TQFP-EP（10x10） 包裝:托盤 其它名稱:Q5134101 |
| IDTAMB0483D0RJ | 功能描述:IC MEMORY BUFFER ADV DIMM 655BGA RoHS:否 類別:集成電路 (IC) >> 接口 - 信號緩沖器，中繼器，分配器 系列:* 標(biāo)準(zhǔn)包裝:160 系列:- 類型:轉(zhuǎn)發(fā)器 Tx/Rx類型:以太網(wǎng) 延遲時間:- 電容 - 輸入:- 電源電壓:2.37 V ~ 2.63 V 電流 - 電源:60mA 安裝類型:表面貼裝 封裝/外殼:64-TQFP 裸露焊盤 供應(yīng)商設(shè)備封裝:64-TQFP-EP（10x10） 包裝:托盤 其它名稱:Q5134101 |
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