IDT72V36100/72V36110 3.3V HIGH DENSITY SUPERSYNC IITM <" />
參數(shù)資料
型號(hào): IDT72V36100L7-5BBI
廠商: IDT, Integrated Device Technology Inc
文件頁(yè)數(shù): 24/48頁(yè)
文件大?。?/td> 0K
描述: IC FIFO 64X36 7-5NS 144BGA
標(biāo)準(zhǔn)包裝: 1
系列: 72V
功能: 同步
存儲(chǔ)容量: 2.3K(64 x 36)
數(shù)據(jù)速率: 166MHz
訪問(wèn)時(shí)間: 5ns
電源電壓: 3.15 V ~ 3.45 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 144-BGA
供應(yīng)商設(shè)備封裝: 144-PBGA(13x13)
包裝: 托盤(pán)
其它名稱: 72V36100L7-5BBI
30
COMMERCIAL AND INDUSTRIAL
TEMPERATURE RANGES
IDT72V36100/72V36110 3.3V HIGH DENSITY SUPERSYNC IITM 36-BIT FIFO
65,536 x 36 and 131,072 x 36
OCTOBER 22, 2008
Figure
10.
Read
Timing
(First
Word
Fall
Through
Mode)
NOTES:
1.
t
SKEW1
is
the
minimum
time
between
a
rising
RCLK
edge
and
a
rising
WCLK
edge
to
guarantee
that
IR
will
go
LOW
after
one
WCLK
cycle
plus
t
WFF
.If
the
time
between
the
rising
edge
of
RCLK
and
the
rising
edge
of
WCLK
is
less
than
tSKEW1
,then
the
IR
assertion
may
be
delayed
one
extra
WCLK
cycle.
2.
tSKEW2
is
the
minimum
time
between
a
rising
RCLK
edge
and
a
rising
WCLK
edge
to
guarantee
that
PAF
will
go
HIGH
after
one
WCLK
cycle
plus
t
PAFS
.If
the
time
between
the
rising
edge
of
RCLK
and
the
rising
edge
of
WCLK
is
less
than
tSKEW2
,then
the
PAF
deassertion
may
be
delayed
one
extra
WCLK
cycle.
3.
LD
=
HIGH
4.
n=
PAE
Offset,
m
=
PAF
offset
and
D
=
maximum
FIFO
depth.
5
.
D
=
65,537
for
the
IDT72V36100
and
131,073
for
the
IDT72V36110.
WCLK
12
WEN
D
0
-
D
17
RCLK
tENS
REN
Q
0
-
Q
17
PAF
HF
PAE
IR
OR
W
1
W
1
W
2
W
3
W
m+2
W
[m+3]
tOHZ
tSKEW1
tENH
tDS
tDH
tOE
tA
tPAFS
tWFF
tENS
OE
tSKEW2
W
D
6117
drw15
tPAES
W
[D-n]
W
[D-n-1]
tA
tHF
tREF
W
[D-1]
W
D
tA
W
[D-n+1]
W
[m+4]
W
[D-n+2]
(1)
(2)
tENS
D-1
+
1
]
[
W
2
D-1
+
2
]
[
W
2
1
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