參數(shù)資料
型號(hào): IDT71V3579YSA75BQGI
廠商: Integrated Device Technology, Inc.
元件分類: 通用總線功能
英文描述: 128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect
中文描述: 128K的米鼠36,256 × 18 3.3同步SRAM的3.3V的I / O的流量,通過輸出脈沖計(jì)數(shù)器,單周期取消
文件頁(yè)數(shù): 2/22頁(yè)
文件大?。?/td> 521K
代理商: IDT71V3579YSA75BQGI
6.42
IDT71V3577, IDT71V3579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges
Pin Definitions
(1)
NOTE:
1. All synchronous inputs must meet specified setup and hold times with respect to CLK.
Symbol
Pin Function
I/O
Active
Description
A
0
-A
17
Address Inputs
I
N/A
Synchronous Address inputs. The address register is triggered by a combi-nation of the rising edge of CLK
and
ADSC
Lowor
ADSP
Lowand
CE
Low
ADSC
Address Status
(Cache Controller)
I
LOW
Synchronous Address Status fromCache Controller
ADSC
is an active LOW input that is used to load the
address registers wthnewaddresses.
ADSP
Address Status
(Processor)
I
LOW
Synchronous Address Status fromProcessor
ADSP
is an active LOW input that is used to load the address
registers wth newaddresses.
ADSP
is gated by
CE
.
ADV
Burst Address
Advance
I
LOW
Synchronous Address Advance.
ADV
is an active LOW input that is used to advance the internal burst counter
controlling burst access after the initial address is loaded. When the input is HIGH the burst counter is not
incremented; that is, there is no address advance.
BWE
Byte Write Enable
I
LOW
Synchronous byte write enable gates the byte write inputs
BW
1
-
BW
4
. If
BWE
is LOW at the rising edge of CLK
then
BW
x inputs are passed to the next stage in the circuit. If
BWE
is HIGH then the byte write inputs are
blocked and only
GW
can intiate a write cycle.
BW
1
-
BW
4
Individual Byte
Write Enables
I
LOW
Synchronous byte write enables.
BW
1
controls I/O
0-7
, I/O
P1
,
BW
2
controls I/O
8-15
, I/O
P2
, etc. Any active byte
write causes all outputs to be disabled.
CE
Chip Enable
I
LOW
Synchronous chip enable.
CE
is used wth CS
0
and
CS
1
to enable the IDT71V3577/79.
CE
also gates
ADSP
.
CLK
Clock
I
N/A
This is the clock input. All timng references for the device are made wth respect to this input.
CS
0
Chip Select 0
I
HIGH
Synchronous active HIGH chip select. CS
0
is used wth
CE
and
CS
1
to enable the chip.
CS
1
Chip Select 1
I
LOW
Synchronous active LOW chip select.
CS
1
is used wth
CE
and CS
0
to enable the chip.
GW
Global Write
Enable
I
LOW
Synchronous global write enable. This input wll write all four 9-bitdata bytes when LOW on the rising edge of
CLK.
GW
supersedes individual byte write enables.
I/O
0
-I/O
31
I/O
P1
-I/O
P4
Data Input/Output
I/O
N/A
Synchronous data input/output (I/O) pins. The data input path is registered, triggered by the rising edge of
CLK. The data output path is flow-through (no output register).
LBO
Linear Burst Order
I
LOW
Asynchronous burst order selection input. When
LBO
is HIGH, the inter-leaved burst sequence is selected.
When
LBO
is LOW the Linear burst sequence is selected.
LBO
is a static input and must not change state
while the device is operating.
OE
Output Enable
I
LOW
Asynchronous output enable. When
OE
is LOW the data output drivers are enabled on the I/O pins if the chip
is also selected. When
OE
is HIGH the I/O pins are in a high-impedance state.
TMS
Test ModeSelect
I
N/A
Gives input command for TAP controller Sampled on rising edge of TDK. This pin has an internal pullup.
TDI
Test Data Input
I
N/A
Serial input of registers placed between TDI and TDO. Sampled on rising edge of TCK. This pin has an
internal pullup.
TCK
Test Clock
I
N/A
Clock input of TAP controller Each TAP event is clocked. Test inputs are captured on rising edge of TCK,
while test outputs are driven fromthe falling edge of TCK. This pin has an internal pullup.
TDO
Test DataOutput
O
N/A
Serial output of registers placed between TDI and TDO. This output is active depending on the state of the
TAP controller
TRST
JTAG Reset
(Optional)
I
LOW
Optional Asynchronous JTAG reset. Can be used to reset the TAP controller but not required. JTAG reset
occurs automatically at power up and also resets using TMS and TCK per IEEE 1149.1. If not used
TRST
can
be left floating. This pin has an internal pullup. Only available in BGA package.
ZZ
Sleep Mode
I
HIGH
Asynchronous sleep mode input. ZZ HIGH wll gate the CLK internally and power down the IDT71V3577/79 to
its lowest power consumption level. Data retentionis guaranteed in Sleep Mode.This pin has an internal pull
down.
V
DD
Power Supply
N/A
N/A
3.3V core power supply.
V
DDQ
Power Supply
N/A
N/A
3.3V I/O Supply.
V
SS
Ground
N/A
N/A
Ground.
NC
No Connect
N/A
N/A
NC pins are not electrically connected to the device.
5280 tbl 02
相關(guān)PDF資料
PDF描述
IDT71V3579YSA75PFGI 128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect
IDT71V416S10BEG 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)
IDT71V416S10BEGI 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)
IDT71V416S10PHG 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)
IDT71V416S10PHGI 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT71V416L10BE 功能描述:IC SRAM 4MBIT 10NS 48FBGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步 存儲(chǔ)容量:4.5M(256K x 18) 速度:133MHz 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP(14x20) 包裝:托盤
IDT71V416L10BE8 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 4MBIT 10NS 48CABGA
IDT71V416L10BEG 功能描述:IC SRAM 4MBIT 10NS 48FBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步 存儲(chǔ)容量:16M(2M x 8,1M x 16) 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA(6x8) 包裝:帶卷 (TR)
IDT71V416L10BEG8 功能描述:IC SRAM 4MBIT 10NS 48FBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步 存儲(chǔ)容量:4.5M(256K x 18) 速度:133MHz 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP(14x20) 包裝:托盤
IDT71V416L10BEGI 功能描述:IC SRAM 4MBIT 10NS 48FBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:576 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:閃存 - NAND 存儲(chǔ)容量:512M(64M x 8) 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP(0.724",18.40mm 寬) 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040