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參數(shù)資料
| 型號(hào)： | IDT71V3557S75BG |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs |
| 中文描述： | 128K X 36 ZBT SRAM, 7.5 ns, PBGA119 |
| 封裝： | 14 X 22 MM, PLASTIC, BGA-119 |
| 文件頁數(shù)： | 9/28頁 |
| 文件大小： | 996K |
| 代理商： | IDT71V3557S75BG |
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IDT71V3557, IDT71V3559, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
ZBT Feature, 3.3V I/O, Burst Counter, and Flow-Through Outputs Commercial and Industrial Temperature Ranges
Synchronous Truth Table
(1)
CEN
R/
W
CE
1
,
CE
2
(5)
USED
9
Interleaved Burst Sequence Table (
LBO
=V
DD
)
Partial Truth Table for Writes
(1)
NOTES:
1. L = V
IL
, H = V
IH
, X = Dont Care.
2. When ADV/
LD
signal is sampled high, the internal burst counter is incremented. The R/
W
signal is ignored when the counter is advanced. Therefore the nature of
the burst cycle (Read or Write) is determned by the status of the R/
W
signal when the first address is loaded at the beginning of the burst cycle.
3. Deselect cycle is initiated when either (
CE
1
, or
CE
2
is sampled high or CE
2
is sampled low) and ADV/
LD
is sampled low at rising edge of clock. The data bus will
tri-state one cycle after deselect is initiated.
4. When
CEN
is sampled high at the rising edge of clock, that clock edge is blocked frompropogating through the part. The state of all the internal registers and the I/
Os remains unchanged.
5. To select the chip requires
CE
1
= L,
CE
2
= L and CE
2
= H on these chip enable pins. The chip is deselected if any one of the chip enables is false.
6. Device Outputs are ensured to be in High-Z during device power-up.
7. Q - data read fromthe device, D - data written to the device.
NOTES:
1. L = V
IL
, H = V
IH
, X = Dont Care.
2. Multiple bytes may be selected during the same cycle.
3. N/A for x18 configuration.
NOTE:
1. Upon completion of the Burst sequence the counter wraps around to its initial state and continues counting.
ADV/
LD
BW
x
ADDRESS
PREVIOUS CYCLE
CURRENT CYCLE
I/O
(One cycle later)
L
L
L
L
Valid
External
X
LOAD WRITE
D
(7)
L
H
L
L
X
External
X
LOAD READ
Q
(7)
L
X
X
H
Valid
Internal
LOAD WRITE /
BURST WRITE
BURST WRITE
(Advance burst counter)
(2)
D
(7)
L
X
X
H
X
Internal
LOAD READ /
BURST READ
BURST READ
(Advance burst counter)
(2)
Q
(7)
L
X
H
L
X
X
X
DESELECT or STOP
(3)
HIZ
L
X
X
H
X
X
DESELECT / NOOP
NOOP
HIZ
H
X
X
X
X
X
X
SUSPEND
(4)
Previous Value
5282 tbl 08
Sequence 1
Sequence 2
Sequence 3
Sequence 4
A1
A0
A1
A0
A1
A0
A1
A0
First Address
0
0
0
1
1
0
1
1
Second Address
0
1
0
0
1
1
1
0
Third Address
1
0
1
1
0
0
0
1
Fourth Address
(1)
1
1
1
0
0
1
0
0
5282 tbl 10
OPERATION
R/
W
BW
1
BW
2
BW
3
(3)
BW
4
(3)
READ
H
X
X
X
X
WRITE ALL BYTES
L
L
L
L
L
WRITE BYTE 1 (I/O[0:7], I/O
P1
)
(2)
L
L
H
H
H
WRITE BYTE 2 (I/O[8:15], I/O
P2
)
(2)
L
H
L
H
H
WRITE BYTE 3 (I/O[16:23], I/O
P3
)
(2,3)
L
H
H
L
H
WRITE BYTE 4 (I/O[24:31], I/O
P4
)
(2,3)
L
H
H
H
L
NO WRITE
L
H
H
H
H
5282 tbl 09
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| IDT71V3557S75BG8 | 功能描述:IC SRAM 4MBIT 75NS 119BGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步 存儲(chǔ)容量:4.5M（256K x 18） 速度:133MHz 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x20） 包裝:托盤 |
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