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參數(shù)資料
| 型號： | IDT71V2576SA133PF |
| 廠商： | Integrated Device Technology, Inc. |
| 元件分類： | 通用總線功能 |
| 英文描述： | 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect |
| 中文描述： | 128K的米鼠36，256 × 18 3.3同步SRAM的2.5VI / O的流水線輸出，脈沖計數(shù)器，單周期取消 |
| 文件頁數(shù)： | 17/22頁 |
| 文件大?。?/td> | 282K |
| 代理商： | IDT71V2576SA133PF |
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IDT71V2576, IDT71V2578, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
100 TQFP Capacitance
(TA = +25°C, f = 1.0MHz)
Recommended DC Operating
Conditions
Recommended Operating
Temperature and Supply Voltage
Absolute Maximum Ratings(1)
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. VDD terminals only.
3. VDDQ terminals only.
4. Input terminals only.
5. I/O terminals only.
6. This is a steady-state DC parameter that applies after the power supplies have
ramped up. Power supply sequencing is not necessary; however, the voltage
on any input or I/O pin cannot exceed VDDQ during power supply ramp up.
7. TA is the "instant on" case temperature
NOTES:
1. VIH (max) = VDDQ + 1.0V for pulse width less than tCYC/2, once per cycle.
2. VIL (min) = -1.0V for pulse width less than tCYC/2, once per cycle.
NOTE:
1. This parameter is guaranteed by device characterization, but not production tested.
Symbol
Rating
Commercial &
Industrial
Unit
VTERM(2)
Terminal Voltage with
Respect to GND
-0.5 to +4.6
V
VTERM(3,6)
Terminal Voltage with
Respect to GND
-0.5 to VDD
V
VTERM(4,6)
Terminal Voltage with
Respect to GND
-0.5 to VDD +0.5
V
VTERM(5,6)
Terminal Voltage with
Respect to GND
-0.5 to VDDQ +0.5
V
TA(7)
Commercial
Operating Temperature
-0 to +70
oC
Industrial
Operating Temperature
-40 to +85
oC
TBIAS
Temperature
Under Bias
-55 to +125
oC
TSTG
Storage
Temperature
-55 to +125
oC
PT
Power Dissipation
2.0
W
IOUT
DC Output Current
50
mA
4876 tbl 03
Grade
Temperature(1)
VSS
VDD
VDDQ
Commercial
0°C to +70°C
0V
3.3V±5%
2.5V±5%
Industrial
-40°C to +85°C
0V
3.3V±5%
2.5V±5%
4876 tbl 04
Symbol
Parameter
Min.
Typ.
Max.
Unit
VDD
Core Supply Voltage
3.135
3.3
3.465
V
VDDQ
I/O Supply Voltage
2.375
2.5
2.625
V
VSS
Supply Voltage
0
V
VIH
Input High Voltage -
Inputs
1.7
____
VDD
+0.3
V
VIH
Input High Voltage - I/O
1.7
____
VDDQ
+0.3(1)
V
VIL
Input Low Voltage
-0.3(2)
____
0.7
V
4876 tbl 05
Symbol
Parameter(1)
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 3dV
5
pF
CI/O
I/O Capacitance
VOUT = 3dV
7
pF
4876 tbl 07
NOTES:
1. TA is the "instant on" case temperature
Symbol
Parameter(1)
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 3dV
7
pF
CI/O
I/O Capacitance
VOUT = 3dV
7
pF
4876 tbl 07a
119 BGA Capacitance
(TA = +25°C, f = 1.0MHz)
165 fBGA Capacitance
(TA = +25°C, f = 1.0MHz)
Symbol
Parameter(1)
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 3dV
7
pF
CI/O
I/O Capacitance
VOUT = 3dV
7
pF
4876 tbl 07b
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| IDT71V2576SA133PFI | 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect |
| IDT71V2576SA150BG | 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| IDT71V2576YS150PF | 功能描述:IC SRAM 4MBIT 150MHZ 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 05/Nov/2008 標(biāo)準(zhǔn)包裝:84 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 ZBT 存儲容量:4.5M（128K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:119-BGA 供應(yīng)商設(shè)備封裝:119-PBGA（14x22） 包裝:托盤 其它名稱:71V3557SA75BGI |
| IDT71V2576YS150PF8 | 功能描述:IC SRAM 4MBIT 150MHZ 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 05/Nov/2008 標(biāo)準(zhǔn)包裝:84 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 ZBT 存儲容量:4.5M（128K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:119-BGA 供應(yīng)商設(shè)備封裝:119-PBGA（14x22） 包裝:托盤 其它名稱:71V3557SA75BGI |
| IDT71V2576YS150PFG | 功能描述:IC SRAM 4MBIT 150MHZ 100TQFP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 05/Nov/2008 標(biāo)準(zhǔn)包裝:84 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 ZBT 存儲容量:4.5M（128K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:119-BGA 供應(yīng)商設(shè)備封裝:119-PBGA（14x22） 包裝:托盤 其它名稱:71V3557SA75BGI |
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| IDT71V2578S133BGGI | 制造商:INT-DEV 功能描述: |
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