參數資料
型號: IDT70V7319S133DD
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: HIGH-SPEED 3.3V 256K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
中文描述: 256K X 18 DUAL-PORT SRAM, 15 ns, PQFP144
封裝: TQFP-144
文件頁數: 16/22頁
文件大小: 621K
代理商: IDT70V7319S133DD
6.42
16
IDT70V7319S
High-Speed 256K x 18 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges
Timing Waveform of Flow-Through Read-to-Write-to-Read (
OE
= V
IL
)
(2)
t
CYC1
Timing Waveform of Flow-Through Read-to-Write-to-Read (
OE
Controlled)
(2)
t
CYC1
NOTES:
1. Output state (High, Low, or High-impedance) is determned by the previous cycle control signals.
2.
CE
0
,
UB
/
LB
, and
ADS
= V
IL
; CE
1
,
CNTEN
, and
REPEAT
= V
IH
.
3. Addresses do not have to be accessed sequentially since
ADS
= V
IL
constantly loads the address on the rising edge of the CLK; numbers are for
reference use only.
4. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity.
R/
W
ADDRESS
An
An +1
An + 2
An + 2
An + 3
An + 4
DATA
IN
Dn + 2
CE
0
CLK
5629 drw 14
Qn
DATA
OUT
CE
1
UB
/
LB
t
CD1
Qn + 1
t
CH1
t
CL1
t
SD
t
HD
t
CD1
t
CD1
t
DC
t
CKHZ
NOP
Qn + 3
t
CD1
t
DC
t
SC
t
HC
t
SB
t
HB
t
SW
t
HW
t
SA
t
HA
READ
READ
t
CKLZ
(3)
(1)
t
SW
t
HW
WRITE
(4)
R/
W
ADDRESS
An
An +1
An + 2
t
SD
t
HD
An + 3
An + 4
An + 5
(3)
DATA
IN
Dn + 2
CE
0
CLK
5629 drw 15
Qn
DATA
OUT
CE
1
UB
/
LB
t
CD1
t
CH1
t
CL1
t
CD1
t
DC
Qn + 4
t
CD1
t
DC
t
SC
t
HC
t
SB
t
HB
t
SW
t
HW
t
SA
t
HA
READ
WRITE
READ
t
CKLZ
(1)
Dn + 3
t
OHZ
t
SW
t
HW
OE
t
OE
相關PDF資料
PDF描述
IDT70V7319S133DDI HIGH-SPEED 3.3V 256K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
IDT70V7319S200DDI HIGH-SPEED 3.3V 256K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
IDT70V7319S166BC HIGH-SPEED 3.3V 256K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
IDT70V7319S166BCI Photoelectric Sensor; Sensor Input Type:Optical; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Sensor Housing:Rectangular; Turn Off Time:1ms; Turn On Time:1ms; Range:1.5" focal point
IDT70V7319S166BF Photoelectric Sensor; Sensor Input Type:Optical; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Sensor Housing:Rectangular; Turn Off Time:1ms; Turn On Time:1ms; Range:12" using 90% reflectance white card
相關代理商/技術參數
參數描述
IDT70V7319S133DDI 功能描述:IC SRAM 4MBIT 133MHZ 144TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步,DDR II 存儲容量:18M(1M x 18) 速度:200MHz 接口:并聯 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應商設備封裝:165-CABGA(13x15) 包裝:托盤 其它名稱:71P71804S200BQ
IDT70V7319S166BC 功能描述:IC SRAM 4MBIT 166MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應商設備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70V7319S166BC8 功能描述:IC SRAM 4MBIT 166MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應商設備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70V7319S166BCGI 功能描述:IC SRAM 4MBIT 166MHZ 256BGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應商設備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70V7319S166BCI 功能描述:IC SRAM 4MBIT 166MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應商設備封裝:8-SOIC 包裝:帶卷 (TR)