參數(shù)資料
型號: IDT70T653MS15BC
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: HIGH-SPEED 2.5V 512K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE
中文描述: 512K X 36 DUAL-PORT SRAM, 15 ns, PBGA256
封裝: BGA-256
文件頁數(shù): 4/24頁
文件大?。?/td> 309K
代理商: IDT70T653MS15BC
IDT70T653M Preliminary
High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM Industrial and Commercial Temperature Ranges
Pin Names
Left Port
Right Port
Names
4
NOTES:
1. V
DD
, OPT
X
, and V
DDQX
must be set to appropriate operating levels prior to
applying inputs on I/O
X
.
2. OPT
X
selects the operating voltage levels for the I/Os and controls on that port.
If OPT
X
is set to V
DD
(2.5V), then that port's I/Os and controls will operate at 3.3V
levels and V
DDQX
must be supplied at 3.3V. If OPT
X
is set to V
SS
(0V), then that
port's I/Os and controls will operate at 2.5V levels and V
DDQX
must be supplied
at 2.5V. The OPT pins are independent of one another—both ports can operate
at 3.3V levels, both can operate at 2.5V levels, or either can operate at 3.3V
with the other at 2.5V.
3. The sleep mode pin shuts off all dynamic inputs, except JTAG inputs, when
asserted. OPTx,
INT
x and the sleep mode pins themselves (ZZx) are not
affected during sleep mode. It is recommended that boundry scan not be operated
during sleep mode.
CE
0L
,
CE
1L
CE
0R
,
CE
1R
Chip Enables (Input)
R/
W
L
R/
W
R
Read/Write Enable (Input)
OE
L
OE
R
Output Enable (Input)
A
0L
- A
18L
A
0R
- A
18R
Address (Input)
I/O
0L
- I/O
35L
I/O
0R
- I/O
35R
Data Input/Output
SEM
L
SEM
R
Semaphore Enable (Input)
INT
L
INT
R
Interrupt Flag (Output)
BUSY
L
BUSY
R
Busy Input
BE
0L
-
BE
3L
BE
0R
-
BE
3R
Byte Enables (9-bit bytes) (Input)
V
DDQL
V
DDQR
Power (I/O Bus) (3.3V or 2.5V)
(1)
(Input)
OPT
L
OPT
R
Option for selecting V
DDQX
(1,2)
(Input)
ZZ
L
ZZ
R
Sleep Mode Pin
(3)
(Input)
V
DD
Power (2.5V)
(1)
(Input)
V
SS
Ground (0V) (Input)
TDI
Test Data Input
TDO
Test Data Output
TCK
Test Logic Clock (10MHz) (Input)
TMS
Test Mode Select (Input)
TRST
Reset (Initialize TAP Controller) (Input)
5679 tbl 01
相關PDF資料
PDF描述
IDT70T653MS15BCI HIGH-SPEED 2.5V 512K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE
IDT70T9359L9BF HIGH-SPEED 2.5V 8/4K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
IDT70T9359L9BFI HIGH-SPEED 2.5V 8/4K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
IDT70T9359L9PF HIGH-SPEED 2.5V 8/4K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
IDT70T9359L9PFI HIGH-SPEED 2.5V 8/4K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
相關代理商/技術參數(shù)
參數(shù)描述
IDT70T653MS15BC8 功能描述:IC SRAM 18MBIT 15NS 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應商設備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70T659S10BC 功能描述:IC SRAM 4MBIT 10NS 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應商設備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70T659S10BC8 功能描述:IC SRAM 4MBIT 10NS 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應商設備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70T659S10BCI 功能描述:IC SRAM 4MBIT 10NS 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應商設備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70T659S10BCI8 功能描述:IC SRAM 4MBIT 10NS 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應商設備封裝:8-SOIC 包裝:帶卷 (TR)