參數(shù)資料
型號： IDT70T653MS10BCI
廠商： Integrated Device Technology, Inc.
英文描述： HIGH-SPEED 2.5V 512K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE
中文描述： 高速2.5V的為512k × 36 3.3 5011 2.5V的接口ASYNCHRONO美國雙端口靜態(tài)RAM
文件頁數(shù)： 7/24頁
文件大小： 309K
代理商： IDT70T653MS10BCI
7
IDT70T653M Preliminary
High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
(V
DD
= 2.5V ± 100mV)
NOTES:
1.
2.
3.
V
DDQ
is selectable (3.3V/2.5V) via OPT pins. Refer to page 6 for details.
Applicable only for TMS, TDI and
TRST
inputs.
Outputs tested in tri-state mode.
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
(3)
(V
DD
= 2.5V ± 100mV)
NOTES:
1. At f = f
MAX
, address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/t
RC
, using "AC TEST CONDITIONS" at input
levels of GND to 3.3V.
2. f = 0 means no address or control lines change. Applies only to input at CMOS level standby.
3. Port "A" may be either left or right port. Port "B" is the opposite from port "A".
4. V
DD
= 3.3V, T
A
= 25°C for Typ, and are not production tested. I
DD DC
(f=0)
= 200mA (Typ).
5.
CE
X
= V
IL
means
CE
0X
= V
IL
and CE
1X
= V
IH
CE
X
= V
IH
means
CE
0X
= V
IH
or CE
1X
= V
IL
CE
X
< 0.2V means
CE
0X
< 0.2V and CE
1X
> V
DDQX
- 0.2V
CE
X
> V
DDQX
- 0.2V means
CE
0X
> V
DDQX
- 0.2V or CE
1X
< 0.2V.
"X" represents "L" for left port or "R" for right port.
6. I
SB
1
, I
SB
2
and I
SB
4
will all reach full standby levels (I
SB
3
) on the appropriate port(s) if ZZ
L
and /or ZZ
R
= V
IH
.
70T653MS10
Com'l Only
70T653MS12
Com'l
& Ind
70T653MS15
Com'l Only
Symbol
Parameter
Test Condition
Version
Typ.
(4)
Max.
Typ.
(4)
Max.
Typ.
(4)
Max.
Unit
I
DD
Dynamic Operating
Current (Both
Ports Active)
CE
L
and
CE
R
= V
IL
,
Outputs Disabled
f = f
MAX
COM'L
S
600
810
600
710
450
600
mA
IND
S
____
____
600
790
____
____
I
SB1
(6)
Standby Current
(Both Ports - TTL
Level Inputs)
CE
L
=
CE
R
= V
IH
f = f
MAX
(1)
COM'L
S
180
240
150
210
120
170
mA
IND
S
____
____
150
260
____
____
I
SB2
(6)
Standby Current
(One Port - TTL
Level Inputs)
CE
"A"
= V
IL
and
CE
"B"
= V
IH
(5)
Active Port Outputs Disabled,
f = f
MAX
COM'L
S
400
530
360
460
300
400
mA
IND
S
____
____
360
510
____
____
I
SB3
Full Standby Current
(Both Ports - CMOS
Level Inputs)
Both Ports
CE
L
and
CE
R
> V
DD
- 0.2V, V
IN
> V
DD
- 0.2V
or V
IN
< 0.2V, f = 0
(2)
COM'L
S
4
20
4
20
4
20
mA
IND
S
____
____
4
40
____
____
I
SB4
(6)
Full Standby Current
(One Port - CMOS
Level Inputs)
CE
"A"
< 0.2V and
CE
"B"
> V
DD
- 0.2V
(5)
V
IN
> V
DD
- 0.2V or V
IN
< 0.2V, Active
Port, Outputs Disabled, f = f
MAX
(1)
COM'L
S
400
530
360
460
300
400
mA
IND
S
____
____
360
510
____
____
I
ZZ
Sleep Mode Current
(Both Ports - TTL
Level Inputs)
ZZ
L =
ZZ
R =
V
IH
f = f
MAX
(1)
COM'L
S
4
20
4
20
4
20
mA
IND
S
____
____
4
40
____
____
5679 tbl 10
Symbol
Parameter
Test Conditions
70T653M
Unit
Min.
Max.
|I
LI
|
Input Leakage Current
(1)
V
DDQ
= Max., V
IN
= 0V to V
DDQ
___
10
μA
|I
LI
|
JTAG & ZZ Input Leakage Current
(1,2)
V
DD =
Max.
,
V
IN
= 0V to V
DD
___
+60
μA
|I
LO
|
Output Leakage Current
(1,3)
CE
0
= V
IH
or CE
1
= V
IL
, V
OUT
= 0V to V
DDQ
___
10
μA
V
OL
(3.3V)
Output Low Voltage
(1)
I
OL
= +4mA, V
DDQ
= Min.
___
0.4
V
V
OH
(3.3V)
Output High Voltage
(1)
I
OH
= -4mA, V
DDQ
= Min.
2.4
___
V
V
OL
(2.5V)
Output Low Voltage
(1)
I
OL
= +2mA, V
DDQ
= Min.
___
0.4
V
V
OH
(2.5V)
Output High Voltage
(1)
I
OH
= -2mA, V
DDQ
= Min.
2.0
___
V
5679 tbl 09
相關(guān)PDF資料
PDF描述
IDT70T653MS12BC HIGH-SPEED 2.5V 512K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE
IDT70T653MS12BCI HIGH-SPEED 2.5V 512K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE
IDT70T653MS15BC HIGH-SPEED 2.5V 512K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE
IDT70T653MS15BCI HIGH-SPEED 2.5V 512K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE
IDT70T9359L9BF HIGH-SPEED 2.5V 8/4K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT70T653MS12BC 功能描述:IC SRAM 18MBIT 12NS 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70T653MS12BC8 功能描述:IC SRAM 18MBIT 12NS 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70T653MS12BCGI 功能描述:IC SRAM 18MBIT 12NS 256BGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70T653MS12BCI 功能描述:IC SRAM 18MBIT 12NS 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70T653MS12BCI8 功能描述:IC SRAM 18MBIT 12NS 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*