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參數(shù)資料
| 型號： | IDT70T3589S-133DRI |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| 中文描述： | 高速與3.3V 2.5V的256/128/64K × 36 SYNCHRONOU S雙，端口靜態(tài)RAM或2.5V的接口 |
| 文件頁數(shù)： | 15/28頁 |
| 文件大?。?/td> | 442K |
| 代理商： | IDT70T3589S-133DRI |
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6.42
IDT70T3519/99/89S
High-Speed 2.5V 256/128/64K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges
Timing Waveform of Left Port Write to Pipelined Right Port Read
(1,2,4)
CLK
"A"
R/
W
"A"
ADDRESS
"A"
DATA
IN"A"
CLK
"B"
R/
W
"B"
ADDRESS
"B"
DATA
OUT"B"
t
SW
t
HW
t
SA
t
HA
t
SD
t
HD
t
SW
t
HW
t
SA
t
HA
t
CO
(3)
t
CD2
NO
MATCH
VALID
MNO
MATCH
MATCH
VALID
5666 drw 09
t
DC
NOTES:
1.
CE
0
,
BE
n
, and
ADS
= V
IL
; CE
1
,
CNTEN
, and
REPEAT
= V
IH
.
2.
OE
= V
IL
for Port "B", which is being read from.
OE
= V
IH
for Port "A", which is being written to.
3. If t
CO
< minimum specified, then data from Port "B" read is not valid until following Port "B" clock cycle (ie, time from write to valid read on opposite port will be
t
CO
+ 2 t
CYC2
+ t
CD2
). If t
CO
> minimum, then data from Port "B" read is available on first Port "B" clock cycle (ie, time from write to valid read on opposite port
will be t
CO
+ t
CYC2
+ t
CD2
).
4. All timing is the same for Left and Right ports. Port "A" may be either Left or Right port. Port "B" is the opposite of Port "A"
Timing Waveform with Port-to-Port Flow-Through Read
(1,2,4)
DATA
IN "A"
CLK
"B"
R/
W
"B"
ADDRESS
"A"
R/
W
"A"
CLK
"A"
ADDRESS
"B"
NO
MATCH
MATCH
NO
MATCH
MATCH
VALID
t
CD1
t
DC
DATA
OUT "B"
5666 drw 10
VALID
VALID
t
SW
t
HW
t
SA
t
HA
t
SD
t
HD
t
HW
t
HA
t
CD1
t
CO
t
DC
t
SA
t
SW
(3)
NOTES:
1.
CE
0
,
BE
n, and
ADS
= V
IL
; CE
1
,
CNTEN
, and
REPEAT
= V
IH
.
2.
OE
= V
IL
for the Right Port, which is being read from.
OE
= V
IH
for the Left Port, which is being written to.
3. If t
CO
< minimum specified, then data from Port "B" read is not valid until following Port "B" clock cycle (i.e., time from write to valid read on opposite port will be
t
CO
+ t
CYC
+ t
CD1
). If t
CO
> minimum, then data from Port "B" read is available on first Port "B" clock cycle (i.e., time from write to valid read on opposite port will
be t
CO
+ t
CD1
).
4. All timing is the same for both left and right ports. Port "A" may be either left or right port. Port "B" is the opposite of Port "A".
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDT70T3589S166BC | HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70T3589S-166BC | HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70T3589S166BCI | HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70T3589S-166BCI | HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70T3599S-166DRI | HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT70T3589S166BC | 功能描述:IC SRAM 2MBIT 166MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70T3589S166BC8 | 功能描述:IC SRAM 2MBIT 166MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70T3589S166BF | 功能描述:IC SRAM 2MBIT 166MHZ 208FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70T3589S166BF8 | 功能描述:IC SRAM 2MBIT 166MHZ 208FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70T3589S166DR | 功能描述:IC SRAM 2MBIT 166MHZ 208QFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
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