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參數(shù)資料
| 型號： | IDT70T3589S-133BCI |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| 中文描述： | 高速與3.3V 2.5V的256/128/64K × 36 SYNCHRONOU S雙，端口靜態(tài)RAM或2.5V的接口 |
| 文件頁數(shù)： | 23/28頁 |
| 文件大?。?/td> | 442K |
| 代理商： | IDT70T3589S-133BCI |
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6.42
IDT70T3519/99/89S
High-Speed 2.5V 256/128/64K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges
Functional Description
The IDT70T3519/99/89 provides a true synchronous Dual-Port Static
RAM interface. Registered inputs provide minimal set-up and hold times
on address, data, and all critical control inputs. All internal registers are
clocked on the rising edge of the clock signal, however, the self-timed
internal write pulse width is independent of the cycle time.
An asynchronous output enable is provided to ease asyn-
chronous bus interfacing. Counter enable inputs are also provided to stall
the operation of the address counters for fast interleaved
memory applications.
A HIGH on
CE
0
or a LOW on CE
1
for one clock cycle will power down
the internal circuitry to reduce static power consumption. Multiple chip
enables allow easier banking of multiple IDT70T3519/99/89s for depth
expansion configurations. Two cycles are required with
CE
0
LOW and
CE
1
HIGH to re-activate the outputs.
Interrupts
If the user chooses the interrupt function, a memory location (mail
box or message center) is assigned to each port. The left port interrupt
flag (
INT
L
) is asserted when the right port writes to memory location
3FFFE (HEX), where a write is defined as
CE
R
= R/
R
= V
IL
per the
Truth Table. The left port clears the interrupt through access of
address location 3FFFE when
CE
L
= V
IL
and R/
W
L = V
IH
. Likewise, the
right port interrupt flag (
INT
R
) is asserted when the left
port writes to memory location 3FFFF (HEX) and to clear the interrupt
flag (
INT
R
), the right port must read the memory location 3FFFF (1FFFF
or 1FFFE for IDT70T3599 and FFFF or FFFE for IDT70T3589). The
message (36 bits) at 3FFFE or 3FFFF (1FFFF or 1FFFE for IDT70T3599
and FFFF or FFFE for IDT70T3589) is user-defined since it is an
addressable SRAM location. If the interrupt function is not used, address
locations 3FFFE and 3FFFF (1FFFF or 1FFFE for IDT70T3599 and
FFFF or FFFE for IDT70T3589) are not used as mail boxes, but as part
of the random access memory. Refer to Truth Table III for the interrupt
operation.
Collision Detection
Collision is defined as an overlap in access between the two ports
resulting in the potential for either reading or writing incorrect data to a
specific address. For the specific cases: (a) Both ports reading - no
data is corrupted, lost, or incorrectly output, so no collision flag is output
on either port. (b) One port writing, the other port reading - the end
result of the write will still be valid. However, the reading port might
capture data that is in a state of transition and hence the reading port’s
collision flag is output. (c) Both ports writing - there is a risk that the two
ports will interfere with each other, and the data stored in memory will
not be a valid write from either port (it may essentially be a random
combination of the two). Therefore, the collision flag is output on both
ports. Please refer to Truth Table IV for all of the above cases.
The alert flag
(
COL
) is asserted on the 2nd or 3rd rising clock
edge of the affected port following the collision, and remains low for
one cycle. Please refer to Collision Detection Timing table on Page 21.
During that next cycle, the internal arbitration is engaged in resetting
the alert flag (this avoids a specific requirement on the part of the user
to reset the alert flag). If two collisions occur on subsequent clock
cycles, the second collision may not generate the appropriate alert
Sleep Mode
The IDT70T3519/99/89 is equipped with an optional sleep or low
power mode on both ports. The sleep mode pin on both ports is
asynchronous and active high. During normal operation, the ZZ pin is
pulled low. When ZZ is pulled high, the port will enter sleep mode where
it will meet lowest possible power conditions. The sleep mode timing
diagram shows the modes of operation: Normal Operation, No Read/Write
Allowed and Sleep Mode.
For normal operation all inputs must meet setup and hold times prior
to sleep and after recovering from sleep. Clocks must also meet cycle high
and low times during these periods. Three cycles prior to asserting ZZ
(ZZx = V
IH
) and three cycles after de-asserting ZZ (ZZx = V
IL
), the device
must be disabled via the chip enable pins. If a write or read operation occurs
during these periods, the memory array may be corrupted. Validity of data
out from the RAM cannot be guaranteed immediately after ZZ is asserted
(prior to being in sleep). When exiting sleep mode, the device must be in
Read mode (R/
W
x = V
IH
)when chip enable is asserted, and the chip
enable must be valid for one full cycle before a read will result in the output
of valid data.
During sleep mode the RAM automatically deselects itself. The RAM
disconnects ts nternal clock buffer. The external clock may continue to run
without impacting the RAMs sleep current (I
ZZ
). All outputs will remain in
high-Z state while n sleep mode. All nputs are allowed to toggle. The RAM
will not be selected and will not perform any reads or writes.
Collision detection on the IDT70T3519/99/89 represents a
significant advance in functionality over current sync multi-ports, which
have no such capability. In addition to this functionality the
IDT70T3519/99/89 sustains the key features of bandwidth and
flexibility. The collision detection function is very useful in the case of
bursting data, or a string of accesses made to sequential addresses, in
that it indicates a problem within the burst, giving the user the option of
either repeating the burst or continuing to watch the alert flag to see
whether the number of collisions increases above an acceptable
threshold value. Offering this function on chip also allows users to
reduce their need for arbitration circuits, typically done in CPLD’s or
FPGA’s. This reduces board space and design complexity, and gives
the user more flexibility in developing a solution.
flag. A third collision will generate the alert flag as appropriate. In the
event that a user initiates a burst access on both ports with the same
starting address on both ports and one or both ports writing during
each access (i.e., imposes a long string of collisions on contiguous
clock cycles), the alert flag will be asserted and cleared every other
cycle. Please refer to the Collision Detection timing waveform on Page
21.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDT70T3589S133BF | HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70T3589S-133BF | HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70T3589S133BFI | HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70T3589S-133BFI | HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70T3589S133DR | HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT70T3589S133BCI8 | 功能描述:IC SRAM 2MBIT 133MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70T3589S133BF | 功能描述:IC SRAM 2MBIT 133MHZ 208FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70T3589S133BF8 | 功能描述:IC SRAM 2MBIT 133MHZ 208FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70T3589S133BFI | 功能描述:IC SRAM 2MBIT 133MHZ 208FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70T3589S133BFI8 | 功能描述:IC SRAM 2MBIT 133MHZ 208FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
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