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參數(shù)資料
| 型號： | IDT70T3539MS133BC |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | HIGH-SPEED 2.5V 512K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| 中文描述： | 512K X 36 DUAL-PORT SRAM, 15 ns, PBGA256 |
| 封裝： | BGA-256 |
| 文件頁數(shù)： | 24/26頁 |
| 文件大小： | 421K |
| 代理商： | IDT70T3539MS133BC |
6.42
IDT70T3539M Preliminary
High-Speed 2.5V 512K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges
Identification Register Definitions
Value
Array
B
Instruction Field
Array
B
Instruction Field
Array
A
Value
Array
A
Description
Revision Number (31:28)
0x0
Revision Number (63:60)
0x0
Reserved for Version number
IDT Device ID (27:12)
0x333
IDT Device ID (59:44)
0x333
Defines IDT Part number
IDT JEDEC ID (11:1)
0x33
IDT JEDEC ID (43:33)
0x33
Allows unique identification of device vendor as IDT
ID Register Indicator Bit (Bit 0)
1
ID Register Indicator Bit (Bit 32)
1
Indicates the presence of an ID Register
5678 tbl 16
Scan Register Sizes
Register Name
Bit Size
Array A
Bit Size
Array B
Bit Size
70T3539M
Instruction (IR)
4
4
8
Bypass (BYR)
1
1
2
Identification (IDR)
32
32
64
Boundary Scan (BSR)
Note (3)
Note (3)
Note (3)
5678 tbl 17
System Interface Parameters
Instruction
Code
Description
EXTEST
00000000
Forces contents of the boundary scan cells onto the device outputs
(1)
.
Places the boundary scan register (BSR) between TDI and TDO.
BYPASS
11111111
Places the bypass register (BYR) between TDI and TDO.
IDCODE
00100010
Loads the ID register (IDR) with the vendor ID code and places the
register between TDI and TDO.
HIGHZ
01000100
Places the bypass register (BYR) between TDI and TDO. Forces all
device output drivers except
INT
x and
COL
x to a High-Z state.
CLAMP
00110011
Uses BYR. Forces contents of the boundary scan cells onto the device
outputs. Places the bypass register (BYR) between TDI and TDO.
SAMPLE/PRELOAD
00010001
Places the boundary scan register (BSR) between TDI and TDO.
SAMPLE allows data from device inputs
to be captured in the
boundary scan cells and shifted serially through TDO. PRELOAD allows
data to be input serially into the boundary scan cells via the TDI.
RESERVED
01010101, 01110111,
10001000, 10011001,
10101010, 10111011,
11001100
Several combinations are reserved. Do not use codes other than those
identified above.
PRIVATE
01100110,11101110,
11011101
For internal use only.
5678 tbl 18
NOTES:
1. Device outputs = All device outputs except TDO.
2. Device inputs = All device inputs except TDI, TMS, and
TRST
.
3. The Boundary Scan Descriptive Language (BSDL) file for this device is available on the IDT website (www.idt.com), or by contacting your local
IDT sales representative.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDT70T3539MS133BCI | HIGH-SPEED 2.5V 512K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70T3539MS166BC | HIGH-SPEED 2.5V 512K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70T3539MS166BCI | HIGH-SPEED 2.5V 512K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70T3599S133BCI | HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70T3599S133BF | HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT70T3539MS133BC8 | 功能描述:IC SRAM 18MBIT 133MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70T3539MS133BCG | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 18MBIT 133MHZ 256CABGA |
| IDT70T3539MS133BCGI | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 18MBIT 133MHZ 256CABGA |
| IDT70T3539MS133BCI | 功能描述:IC SRAM 18MBIT 133MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:2,500 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（單線） 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP，8-MSOP（0.118"，3.00mm 寬） 供應商設(shè)備封裝:8-MSOP 包裝:帶卷 (TR) |
| IDT70T3539MS133BCI8 | 功能描述:IC SRAM 18MBIT 133MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
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