參數(shù)資料
型號: IDT70T3539MS133BC
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: HIGH-SPEED 2.5V 512K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
中文描述: 512K X 36 DUAL-PORT SRAM, 15 ns, PBGA256
封裝: BGA-256
文件頁數(shù): 16/26頁
文件大?。?/td> 421K
代理商: IDT70T3539MS133BC
6.42
IDT70T3539M Preliminary
High-Speed 2.5V 512K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges
Timing Waveform of Pipelined Read with Address Counter Advance
(1)
ADDRESS
An
CLK
DATA
OUT
Qx - 1
(2)
Qx
Qn
Qn + 2
(2)
Qn + 3
ADS
CNTEN
t
CYC2
t
CH2
t
CL2
5678 drw 15
t
SA
t
HA
t
SAD
t
HAD
t
CD2
t
DC
READ
EXTERNAL
ADDRESS
READ WITH COUNTER
COUNTER
HOLD
t
SAD
t
HAD
t
SCN
t
HCN
READ
WITH
COUNTER
Qn + 1
,
NOTES:
1.
CE
0
,
OE
,
BE
n = V
IL
; CE
1
, R/
W
, and
REPEAT
= V
IH
.
2. If there is no address change via
ADS
= V
IL
(loading a new address) or
CNTEN
= V
IL
(advancing the address), i.e.
ADS
= V
IH
and
CNTEN
= V
IH
, then
the data output remains constant for subsequent clocks.
Timing Waveform of Flow-Through Read with Address Counter Advance
(1)
ADDRESS
An
CLK
DATA
OUT
Qx
(2)
Qn
Qn + 1
Qn + 2
Qn + 3
(2)
Qn + 4
ADS
CNTEN
t
CYC1
t
CH1
t
CL1
5678 drw 16
t
SA
t
HA
t
SAD
t
HAD
READ
EXTERNAL
ADDRESS
READ WITH COUNTER
COUNTER
HOLD
t
CD1
t
DC
t
SAD
t
HAD
t
SCN
t
HCN
READ
WITH
COUNTER
,
相關PDF資料
PDF描述
IDT70T3539MS133BCI HIGH-SPEED 2.5V 512K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
IDT70T3539MS166BC HIGH-SPEED 2.5V 512K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
IDT70T3539MS166BCI HIGH-SPEED 2.5V 512K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
IDT70T3599S133BCI HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
IDT70T3599S133BF HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
相關代理商/技術參數(shù)
參數(shù)描述
IDT70T3539MS133BC8 功能描述:IC SRAM 18MBIT 133MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應商設備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70T3539MS133BCG 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 18MBIT 133MHZ 256CABGA
IDT70T3539MS133BCGI 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 18MBIT 133MHZ 256CABGA
IDT70T3539MS133BCI 功能描述:IC SRAM 18MBIT 133MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:2,500 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?(單線) 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP,8-MSOP(0.118",3.00mm 寬) 供應商設備封裝:8-MSOP 包裝:帶卷 (TR)
IDT70T3539MS133BCI8 功能描述:IC SRAM 18MBIT 133MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應商設備封裝:8-SOIC 包裝:帶卷 (TR)