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參數(shù)資料
| 型號： | IDT70T3519S200DRI |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| 中文描述： | 高速與3.3V 2.5V的256/128/64K × 36 SYNCHRONOU S雙，端口靜態(tài)RAM或2.5V的接口 |
| 文件頁數(shù)： | 9/28頁 |
| 文件大?。?/td> | 442K |
| 代理商： | IDT70T3519S200DRI |
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6.42
IDT70T3519/99/89S
High-Speed 2.5V 256/128/64K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges
Absolute Maximum Ratings
(1)
Symbol
Rating
Commercial
& Industrial
Unit
V
TERM
(V
DD
)
V
DD
Terminal Voltage
with Respect to GND
-0.5 to 3.6
V
V
TERM
(2)
(V
DDQ
)
V
DDQ
Terminal Voltage
with Respect to GND
-0.3 to V
DDQ
+ 0.3
V
V
TERM
(2)
(INPUTS and I/O's)
Input and I/O Terminal
Voltage with Respect to GND
-0.3 to V
DDQ
+ 0.3
V
T
BIAS
(3)
Temperature Under Bias
-55 to +125
o
C
T
STG
Storage Temperature
-65 to +150
o
C
T
JN
Junction Temperature
+150
o
C
I
OUT
(For V
DDQ
=
3.3V) DC Output Current
50
mA
I
OUT
(For V
DDQ
=
2.5V) DC Output Current
40
mA
5666 tbl 06
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
2. This is a steady-state DC parameter that applies after the power supply has reached its
nominal operating value. Power sequencing is not necessary; however, the voltage on
any Input or I/O pin cannot exceed V
DDQ
during power supply ramp up.
3. Ambient Temperature under DC Bias. No AC Conditions. Chip Deselected.
NOTES:
1. These parameters are determined by device characterization, but are not
production tested.
2. 3dV references the interpolated capacitance when the input and output switch
from 0V to 3V or from 3V to 0V.
3. C
OUT
also references C
I/O
.
Capacitance
(1)
(T
A
= +25°C, F = 1.0MH
Z
) PQFP ONLY
Symbol
Parameter
Conditions
(2)
Max.
Unit
C
IN
Input Capacitance
V
IN
= 3dV
8
pF
C
OUT
(3)
Output Capacitance
V
OUT
= 3dV
10.5
pF
5666 tbl 07
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
(V
DD
= 2.5V ± 100mV)
Symbol
Parameter
Test Conditions
70T3519/99/89S
Unit
Min.
Max.
|I
LI
|
Input Leakage Current
(1)
V
DDQ
= Max., V
IN
= 0V to V
DDQ
___
10
μA
|I
LI
|
JTAG & ZZ Input Leakage Current
(1,2)
V
DD =
Max.
,
V
IN
= 0V to V
DD
___
±30
μA
|I
LO
|
Output Leakage Current
(1,3)
CE
0
= V
IH
or CE
1
= V
IL
, V
OUT
= 0V to V
DDQ
___
10
μA
V
OL
(3.3V)
Output Low Voltage
(1)
I
OL
= +4mA, V
DDQ
= Min.
___
0.4
V
V
OH
(3.3V)
Output High Voltage
(1)
I
OH
= -4mA, V
DDQ
= Min.
2.4
___
V
V
OL
(2.5V)
Output Low Voltage
(1)
I
OL
= +2mA, V
DDQ
= Min.
___
0.4
V
V
OH
(2.5V)
Output High Voltage
(1)
I
OH
= -2mA, V
DDQ
= Min.
2.0
___
V
5666 tbl 08
NOTES:
1. V
DDQ
is selectable (3.3V/2.5V) via OPT pins. Refer to p.5 for details.
2. Applicable only for TMS, TDI and
TRST
inputs.
3. Outputs tested in tri-state mode.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDT70T3519S-200DRI | HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70T3589S133BC | HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70T3589S-133BC | HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70T3589S133BCI | HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70T3589S-133BCI | HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
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|---|---|
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