參數(shù)資料
型號: IDT70914S20P
廠商: Integrated Device Technology, Inc.
英文描述: High Speed Low-Noise JFET-Input Quad Operational Amplifier 14-CDIP -55 to 125
中文描述: 高速36K(4K的× 9)同步雙端口RAM
文件頁數(shù): 2/11頁
文件大小: 109K
代理商: IDT70914S20P
6.42
IDT70914S
High-Speed 36K (4K x 9) Synchronous Dual-Port Static RAM Military, Industrial and Commercial Temperature Ranges
,
3490 drw 03
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
50
49
48
47
46
45
44
INDEX
51
52
53
54
55
56
57
58
59
60
9
8
7
6
5
4
3
2
1
68 67 66 65 64 63 62 61
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
A
6L
A
7L
A
8L
A
9L
A
10L
A
11L
OE
L
N/C
V
CC
R/
W
L
N/C
N/C
CE
L
GND
I/O
8L
I/O
7L
I/O
6L
N
I
5
V
C
I
4
I
3
I
2
I
1
I
0
G
G
I
0
I
1
I
2
I
3
V
C
I
4
I
5
A
7R
A
8R
A
9R
A
10R
A
11R
OE
R
N/C
GND
GND
R/
W
R
N/C
N/C
CE
R
GND
I/O
8R
I/O
7R
I/O
6R
A
5
A
4
A
3
A
2
A
1
A
0
C
L
C
L
C
R
C
R
A
0
A
1
A
2
A
3
A
4
A
5
A
6
IDT70914J
J68-1
(4)
68-Pin PLCC
Top View
(5)
!"
#
The IDT70914 is a high-speed 4K x 9 bit synchronous Dual-Port RAM
The memory array is based on Dual-Port memory cells to allow
simultaneous access fromboth ports. Registers on control, data, and
address inputs provide low set-up and hold times. The timng latitude
provided by this approach allow systems to be designed with very short
cycle times. With an input data register, this device has been optimzed for
applications having unidirectional data flow or bi-directional data flow in
bursts.
The IDT70914 utilizes a 9-bit wide data path to allow for parity at the
user's option. This feature is especially useful in data communication
applications where it is necessary to use a parity bit for transmssion/
reception error checking.
Fabricated using IDT’s CMOS high-performance technology, these
Dual-Ports typically operate on only 850mW of power at maximumhigh-
speed clock-to-data output times as fast as 12ns. An automatic power
down feature, controlled by
CE
, permts the on-chip circuitry of each port
to enter a very low standby power mode.
The IDT70914 is packaged in a 68-pin PLCC, and an 80-pin TQFP.
Mlitary grade product is manufactured in compliance with the latest revision
of MIL-PRF-38535 QML, making it ideally suited for mlitary temperature
applications demanding the highest level of performance and reliability.
NOTES:
1. All V
CC
pins must be connected to power supply.
2. All ground pins must be connected to ground supply.
3. J68-1 package body is approximately .95 in x .95 in x .17 in.
4. This package code is used to reference the package diagram
5. This text does not indicate orientation of the actual part-marking.
相關(guān)PDF資料
PDF描述
IDT70914S20PB High Speed Low-Noise JFET-Input Quad Operational Amplifier 14-CFP -55 to 125
IDT70914S20PI HIGH SPEED 36K (4K X 9) SYNCHRONOUS DUAL-PORT RAM
IDT70914S25F High Speed Low-Noise JFET-Input Quad Operational Amplifier 20-LCCC -55 to 125
IDT70914S25FB High Speed Low-Noise JFET-Input Quad Operational Amplifier 20-LCCC -55 to 125
IDT70914S25FI High Speed Low-Noise JFET-Input Quad Operational Amplifier 14-CDIP -55 to 125
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IDT70914S20PF 功能描述:IC SRAM 36KBIT 20NS 80TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:45 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口,異步 存儲容量:128K(8K x 16) 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP(14x14) 包裝:托盤 其它名稱:70V25S15PF
IDT70914S20PF8 功能描述:IC SRAM 36KBIT 20NS 80TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:45 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口,異步 存儲容量:128K(8K x 16) 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP(14x14) 包裝:托盤 其它名稱:70V25S15PF
IDT70914S25J 功能描述:IC SRAM 36KBIT 25NS 68PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:45 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口,異步 存儲容量:128K(8K x 16) 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP(14x14) 包裝:托盤 其它名稱:70V25S15PF
IDT70914S25J8 功能描述:IC SRAM 36KBIT 25NS 68PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:45 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口,異步 存儲容量:128K(8K x 16) 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP(14x14) 包裝:托盤 其它名稱:70V25S15PF
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