<wbr id="36kil"><menuitem id="36kil"></menuitem></wbr>
<kbd id="36kil"><output id="36kil"></output></kbd>
<nobr id="36kil"><noframes id="36kil">
  • <ins id="36kil"><ul id="36kil"><small id="36kil"></small></ul></ins>
            


    
    



    

    
  
    
    
    
    
  
    
  
  

    





    


    
 
 




 
 


    

    
    


    參數(shù)資料
    

    


    


    
型號(hào)：
IDT70825L35GB

    

    
廠商：
INTEGRATED DEVICE TECHNOLOGY INC

    

    
元件分類：
DRAM

    

    
英文描述：
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM⑩)

    

    
中文描述：
8K X 16 STANDARD SRAM, 35 ns, CPGA84

    

    
封裝：
PGA-84

    

    
文件頁(yè)數(shù)：
1/21頁(yè)

    

    
文件大?。?/td>
319K

    

    
代理商：
IDT70825L35GB


    

    

    

	
    
    
    

    
    
	
    Integrated Device Technology, Inc.
    MILITARY AND COMMERCIAL TEMPERATURE RANGES
    OCTOBER 1996
    1996 Integrated Device Technology, Inc.
    DSC-3016/6
    HIGH-SPEED 8K x 16
    SEQUENTIAL ACCESS
    RANDOM ACCESS MEMORY (SARAM)
    FEATURES:
     8K x 16 Sequential Access Random Access Memory
    (SARAM
    )
    - Sequential Access from one port and standard Random
    Access from the other port
    - Separate upper-byte and lower-byte control of the
    Random Access Port
     High-speed operation
    - 20ns t
    AA
     for random access port
    - 20ns t
    CD
     for sequential port
    - 25ns clock cycle time
     Architecture based on Dual-Port RAM cells
     Electrostatic discharge > 2001V, Class II
     Compatible with Intel BMIC and 82430 PCI Set
     Width and Depth Expandable
     Sequential side
    - Address based flags for buffer control
    - Pointer logic supports two internal buffers
     Battery backup operation—2V data retention
     TTL-compatible, single 5V (
    ±
    10%) power supply
     Available in 80-pin TQFP and 84-pin PGA
     Military product compliant to MIL-STD-883.
     Industrial temperature range (–40
    °
    C to +85
    °
    C) is available,
    tested to military electrical specifications.
    FUNCTIONAL BLOCK DIAGRAM
    DESCRIPTION:
    The IDT70825 is a high-speed 8K x 16-bit Sequential
    Access Random Access Memory (SARAM). The SARAM
    offers a single-chip solution to buffer data sequentially on one
    port, and be accessed randomly (asynchronously) through
    the other port. The device has a Dual-Port RAM based
    architecture with a standard SRAM interface for the random
    (asynchronous) access port, and a clocked interface with
    counter sequencing for the sequential (synchronous) access
    port.
    Fabricated using CMOS high-performance technology,
    this memory device typically operates on less than 900mW of
    power at maximum high-speed clock-to-data and Random
    Access. An automatic power down feature, controlled by 
    CE
    ,
    permits the on-chip circuitry of each port to enter a very low
    standby power mode.
    The IDT70825  is packaged in a 80-pin Thin Plastic  Quad
    Flatpack (TQFP) or 84-pin Ceramic Pin Grid Array (PGA).
    Military grade product is manufactured in compliance with the
    latest revision of MIL-STD-883, Class B, making it ideally
    suited to military temperature applications demanding the
    highest level of performance and reliability.
    IDT70825S
    /
    L
    The IDT logo is a registered trademark and SARAM is a trademark of Integrated Device Technology, Inc.
    6.31
    1
    Random
    Access
    Port
    Controls
    Sequential
    Access
    Port
    Controls
    8K X 16
    Memory
    Array
    Data
    L
    Data
    R
    Addr
    L
    Addr
    R
    I/O0-15
    SI/O0-15
    Pointer/
    Counter
    13
    Start Address for Buffer #1
    End Address for Buffer #1
    Start Address for Buffer #2
    End Address for Buffer #2
    Flow Control Buffer
    Flag Status
    1
    2
    13
    13
    13
    16
    13
    13
    RST
    COMPARATOR
    A
    0-12
    13
    R/
    LSB
    MSB
    16
    SCLK
    2
    SR/
    1
    16
    13
    3016 drw 01
    Reg.
    For latest information contact IDT’s web site at www.idt.com or fax-on-demand at 408-492-8391.
    
    
    
    
    
    


    


    

    相關(guān)PDF資料
    		

    PDF描述
    		

    
    

    
IDT70825L45PFB
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM⑩)

    

    
IDT70825L20G
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM⑩)

    

    
IDT70825L20GB
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM⑩)

    

    
IDT70825L35PF
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM⑩)

    

    
IDT70825L35PFB
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM⑩)

    

    

    

    


    


    

    相關(guān)代理商/技術(shù)參數(shù)
    		

    參數(shù)描述
    		

    
    

    
IDT70825L35PF
功能描述:IC SARAM 128KBIT 35NS 80TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ

    

    
IDT70825L35PF8
功能描述:IC SARAM 128KBIT 35NS 80TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ

    

    
IDT70825S20G
功能描述:IC SARAM 128KBIT 20NS 84PGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ

    

    
IDT70825S20PF
功能描述:IC SARAM 128KBIT 20NS 80TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ

    

    
IDT70825S20PF8
功能描述:IC SARAM 128KBIT 20NS 80TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ

    

    
    
    
    
	
    	
    
    
     
     
    發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。
    
 
     
    

   	  
    
     

    
                    			    				      
    
                
    
                  
    
                    
                    
    
                      
    
                      
                      
    采購(gòu)需求
      (若只采購(gòu)一條型號(hào)，填寫一行即可)
    
                      
                      
    發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)
    
                      
                      
    發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)
    
                       
                        
    
                                
                                
    
                                    *型號(hào)
                                    *數(shù)量
                                    廠商
                                    批號(hào)
                                    封裝
                                  
    
                                    
                                
                                
    
                                    
                                        
    
                                            
                                            
                                        
    
                                        		
                                     
                                    
                                        
    
                                        		
                                    
                                        
    
                                        		
                                    
                                        
    
                                        		
                                    
                                        
    
                                        		
                                  
    
                                  
                                   
                                    
                            
    
                             
                             
							                            
    
                          添加更多采購(gòu)
    
                      
    
                      
                      
    
                      
                      
    我的聯(lián)系方式
    
                     
                     
                       
    
                                
                                
                                
    
                                    
                                         *
                                    
                                    
                                  
    
                                  
                                  
    
                                    
                                         *
                                    
                                    
                                  
    
                                  
                                  
    
                                    
                                        
                                    
                                    
                                  
    
                                  
                                  
    
                                    
                                         *