參數(shù)資料
型號： IDT7014S12PF
廠商： INTEGRATED DEVICE TECHNOLOGY INC
元件分類： DRAM
英文描述： Low-Power JFET-Input Operational Amplifier 8-SO 0 to 70
中文描述： 4K X 9 DUAL-PORT SRAM, 12 ns, PQFP64
封裝： 14 X 14 MM, 1.40 MM HEIGHT, TQFP-64
文件頁數(shù)： 2/7頁
文件大?。?/td> 72K
代理商： IDT7014S12PF
6.11
2
IDT7014S
HIGH-SPEED 4K x 9 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATIONS
(1,2)
NOTES
:
1. All V
CC
pins must be connected to power supply.
2. All ground pins must be connected to ground supply.
3. This text does not indicate the orientation of the actual part-marking
2528 tbl 02
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Ambient
Grade
Temperature
Military
–55
°
C to +125
°
C
Commercial
0
°
C to +70
°
C
GND
0V
0V
VCC
5.0V
±
10%
5.0V
±
10%
RECOMMENDED DC OPERATING
CONDTIONS
Symbol
Parameter
V
CC
Supply Voltage
GND
Supply Voltage
V
IH
Input High Voltage
V
IL
Input Low Voltage
NOTES:
1. V
IL
> -1.5V for pulse width less than 10ns.
2. VTERM must not exceed Vcc + 0.5V.
Min.
4.5
0
2.2
–0.5
(1)
Typ.
5.0
0
—
—
Max.
5.5
0
6.0
(2)
0.8
Unit
V
V
V
V
2528 tbl 03
2528 drw 02
IDT 7014
J52-1
PLCC
Top View (3)
INDEX
A
6
A
5
A
4
A
3
A
2
A
1
A
0
A
0
A
1
A
2
A
3
A
4
A
5
46
45
44
43
42
41
40
39
38
37
36
35
34
I/O
6L
A
6L
A
7L
A
8L
A
9L
A
10L
A
11L
OE
L
V
CC
R/
W
L
GND
I/O
8L
I/O
7L
8
9
10
11
12
13
14
15
16
17
18
19
20
47
48
49
50
51
52
1
2
3
4
5
6
7
33
32
31
30
29
28
27
26
25
24
23
22
21
I/O
6R
I/O
5R
I/O
7R
GND
I/O
8R
R/
W
R
GND
OE
R
A
11R
A
10R
A
8R
A
9R
A
7R
I
5
V
C
I
4
I
3
I
2
I
1
I
0
I
0
I
1
I
2
I
3
I
4
V
C
INDEX
IDT7014
PN64-1
TQFP
Top View (3)
8
9
10
11
12
13
14
15
16
1
2
3
4
5
6
7
G
G
N
N
N
N
46
45
44
43
42
41
40
39
38
37
36
35
34
33
47
48
1
1
1
2
3
3
3
2
2
2
2
2
2
2
2
2
4
5
5
5
6
6
6
6
5
5
5
5
5
5
5
6
N/C
V
CC
A
10L
A
11L
OE
L
N/C
R/
W
L
N/C
GND
I/O
8L
I/O
7L
I/O
6L
A
9L
A
6L
A
7L
A
8L
I/O
6R
GND
N/C
R/
W
R
A
7R
A
8R
A
9R
A
10R
A
11R
OE
R
N/C
N/C
GND
I/O
8R
I/O
7R
A
6R
2528 drw 03
I
5
V
C
I
4
I
3
I
2
I
1
I
0
I
0
I
1
I
2
I
3
V
C
I
4
I
5
A
5
A
4
A
3
A
2
A
1
A
0
A
0
A
1
A
2
A
3
A
4
A
5
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Rating
V
TERM
(2)
Terminal Voltage
with Respect to
GND
V
TERM
(3)
Terminal Voltage
T
A
Operating
Temperature
T
BIAS
Temperature
Under Bias
T
STG
Storage
Temperature
I
OUT
DC Output Current
Commercial
–0.5 to +7.0
Military
–0.5 to +7.0
Unit
V
–0.5 to Vcc
0 to +70
–0.5 to Vcc
–55 to +125
V
°
C
–55 to +125
–65 to +135
°
C
–55 to +125
–65 to +150
°
C
50
50
mA
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RAT-
INGS may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. V
TERM
must not exceed Vcc + 0.5V for more than 25% of the cycle time
or 10ns maximum, and is limited to < 20mA for the period of V
TERM
> Vcc
+ 0.5V.
2528 tbl 01
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT7014S12PF8 功能描述:IC SRAM 36KBIT 12NS 64TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:9M（256K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:71V67703S75PFGI
IDT7014S12PFG 功能描述:IC SRAM 36KBIT 12NS 64TQFP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:45 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，異步 存儲容量:128K（8K x 16） 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:70V25S15PF
IDT7014S12PFG8 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 36KBIT 12NS 64TQFP
IDT7014S12PFI 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 4K x 9DUAL-PORT STATIC RAM
IDT7014S12XL 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x9 Dual-Port SRAM
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