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參數(shù)資料
| 型號： | IDT7005L55FB |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | SRAM |
| 英文描述： | Single, Ultra Low Cost, RRIO CMOS Amplifier |
| 中文描述： | 8K X 8 DUAL-PORT SRAM, 55 ns, QFP68 |
| 封裝： | 0.970 X 0.970 INCH, 0.080 INCH HEIGHT, QFP-68 |
| 文件頁數(shù)： | 15/20頁 |
| 文件大?。?/td> | 189K |
| 代理商： | IDT7005L55FB |
6.42
IDT7005S/L
High-Speed 8K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
4
Truth Table I: Non-Contention Read/Write Control
Recommended DC Operating
Conditions
Maximum Operating Temperature
and Supply Voltage(1,2)
Absolute Maximum Ratings(1)
Capacitance(1) (TA = +25°C, f = 1.0MHz)
Truth Table II: Semaphore Read/Write Control(1)
NOTE:
1. There are eight semaphore flags written to via I/O0 and read from I/O0 - I/O7. These eight semaphores are addressed by A0 - A2.
NOTES:
1. This is the parameter TA. This is the "instant on" case temperature.
2
Industrial temperature: for specific speeds, packages and powers contact
your sales office.
NOTE:
1. A0L – A12L is not equal to A0R – A12R
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
2. VTERM must not exceed Vcc + 10% for more than 25% of the cycle time or 10%
maximum, and is limited to < 20mA for the period of VTERM > Vcc + 10%.
NOTES:
1. VIL > -1.5V for pulse width less than 10ns.
2. VTERM must not exceed Vcc + 10%.
NOTES:
1. These parameters are determined by device characterization but are not
production tested (TQFP Package only).
2. 3dV references the interpolated capacitance when the input and output signals
switch from 0V to 3V or from 3V to 0V.
Inputs
(1)
Outputs
Mode
CE
R/
W
OE
SEM
I/O0-7
H
X
H
High-Z
Deselected: Power-Down
LL
X
H
DATAIN
Write to Memory
LH
DATAOUT
Read Memory
X
H
X
High-Z
Outputs Disabled
2738 tbl 02
Inputs
(1)
Outputs
Mode
CE
R/
W
OE
SEM
I/O0-7
HH
L
DATAOUT
Read in Semaphore Flag Data Out
H
↑
XL
DATAIN
Write I/Oo into Semaphore Flag
LX
X
L
____
Not Allowed
2738 tbl 03
Symbol
Rating
Commercial
& Industrial
Military
Unit
VTERM
(2)
Terminal Voltage
with Respect to
GND
-0.5 to +7.0
V
TBIAS
Temperature Under
Bias
-55 to +125
-65 to +135
oC
TSTG
Storage
Temperature
-65 to +150
oC
IOUT
DC Output Current
50
mA
2738 tbl 04
Grade
Ambient
Temperature
GND
Vcc
Military
-55OC to+125OC0V
5.0V
+ 10%
Commercial
0OC to +70OC0V
5.0V
+ 10%
Industrial
-40OC to +85OCOV
5.0V
+ 10%
2738 tbl 05
Symbol
Parameter
Min.
Typ.
Max.
Unit
VCC
Supply Voltage
4.5
5.0
5.5
V
GND
Ground
0
V
VIH
Input High Voltage
2.2
____
6.0(2)
V
VIL
Input Low Voltage
-0.5
(1)
____
0.8
V
2738 tbl 06
Symbol
Parameter
Conditions
(2)
Max.
Unit
CIN
Input Capacitance
VIN = 3dV
9
pF
COUT
Output Capacitance
VOUT = 3dV
10
pF
2738 tbl 07
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| IDT7005L55GB | Single, Ultra Low Cost, RRIO CMOS Amplifier |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT7005L55G | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM |
| IDT7005L55GB | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 64KBIT 55NS 68PGA |
| IDT7005L55J | 功能描述:IC SRAM 64KBIT 55NS 68PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，異步 存儲容量:128K（8K x 16） 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:70V25S15PF |
| IDT7005L55J8 | 功能描述:IC SRAM 64KBIT 55NS 68PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:9M（256K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:71V67703S75PFGI |
| IDT7005L55JB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM |
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