參數(shù)資料
型號: IDT6116LA20TD
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: CMOS STATIC RAM 16K (2K x 8 BIT)
中文描述: 2K X 8 STANDARD SRAM, 19 ns, CDIP24
封裝: 0.300 INCH, CERDIP-24
文件頁數(shù): 6/10頁
文件大?。?/td> 91K
代理商: IDT6116LA20TD
5.1
6
IDT6116SA/LA
CMOS STATIC RAM 16K (2K x 8-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
3089 tbl 12
AC ELECTRICAL CHARACTERISTICS
(V
CC
= 5V
±
10%, All Temperature Ranges) (Continued)
6116SA45
6116LA45
6116SA55
(2)
6116LA55
(2)
6116SA70
(2)
6116SA90
(2)
6116LA70
(2)
6116LA90
(2)
6116SA120
(2)
6116LA120
(2)
6116SA150
(2)
6116LA150
(2)
Symbol
READ CYCLE
t
RC
t
AA
t
ACS
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max. Min.
Max.
Min.
Max.
Unit
Read Cycle Time
Address Access Time
Chip Select Access Time
45
45
45
55
55
50
70
70
65
90
90
90
120
120
120
150
150
150
ns
ns
ns
t
CLZ
(3)
Chip Select to Output in
Low-Z
5
5
5
5
5
5
ns
t
OE
Output Enable to Output
Valid
25
40
50
60
80
100
ns
t
OLZ
(3)
Output Enable to Output
in Low-Z
5
5
5
5
5
5
ns
t
CHZ
(3)
Chip Deselect to Output
in High-Z
20
30
35
40
40
40
ns
t
OHZ
(3)
Output Disable to Output
in High-Z
Output Hold from
Address Change
15
30
35
40
40
40
ns
t
OH
5
5
5
5
5
5
ns
NOTES:
1. 0
°
C to + 70
°
C temperature range only.
2. –55
°
C to + 125
°
C temperature range only.
3. This parameter guaranteed with the AC Load (Figure 2) by device characterization, but is not production tested.
3089 tbl 13
AC ELECTRICAL CHARACTERISTICS
(V
CC
= 5V
±
10%, All Temperature Ranges)
6116SA15
(1)
6116LA15
(1)
Symbol
Parameter
Min.
Max.
READ CYCLE
t
RC
Read Cycle Time
15
t
AA
Address Access Time
t
ACS
Chip Select Access Time
t
CLZ
(3)
Chip Select to Output in
5
Low-Z
t
OE
Output Enable to Output
Valid
t
OLZ
(3)
Output Enable to Output
0
in Low-Z
t
CHZ
(3)
Chip Deselect to Output
in High-Z
t
OHZ
(3)
Output Disable to Output
in High-Z
t
OH
Output Hold from
5
Address Change
t
PU
(3)
Chip Select to Power-Up
0
Time
t
PD
(3)
Chip Deselect to Power-
Down Time
6116SA20
6116LA20
Min.
6116SA25
6116LA25
Min.
6116SA35
6116LA35
Min.
Max.
Max.
Max.
Unit
15
15
20
5
19
20
25
5
25
25
35
5
35
35
ns
ns
ns
ns
10
10
13
20
ns
0
5
5
ns
10
11
12
15
ns
8
8
10
13
ns
5
5
5
ns
0
0
0
ns
15
20
25
35
ns
相關(guān)PDF資料
PDF描述
IDT6116LA55SO Enhanced-JFET Low-Power Low-Offset Dual Operational Amplifier 8-SOIC 0 to 70
IDT6116LA55TD Enhanced-JFET Low-Power Low-Offset Dual Operational Amplifier 8-SOIC 0 to 70
IDT6116LA55TP Enhanced-JFET Low-Power Low-Offset Dual Operational Amplifier 8-SOIC 0 to 70
IDT6116LA55TPB Enhanced-JFET Low-Power Low-Offset Dual Operational Amplifier 8-PDIP 0 to 70
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