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    參數(shù)資料
    

    


    


    
型號(hào)：
IC43R16160

    

    
英文描述：
4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM

    

    
中文描述：
4米× 16位× 4個(gè)銀行（256兆）DDR SDRAM內(nèi)存

    

    
文件頁(yè)數(shù)：
23/56頁(yè)

    

    
文件大?。?/td>
1271K

    

    
代理商：
IC43R16160


    

    

    

	
    
    
    

    
    
	
    Self Refresh
    A self refresh command is defined by having CS, RAS, CAS and CKE held low with WE high at the rising
    edge of the clock (CK). Once the self refresh command is initiated, CKE must be held low to keep the device
    in self refresh mode. During the self refresh operation, all inputs except CKE are ignored. The clock is inter-
    nally disabled during self refresh operation to reduce power consumption. The self refresh is exited by sup-
    plying stable clock input before returning CKE high, asserting deselect or NOP command and then asserting
    CKE high for longer than t
    SREX
     for locking of DLL. The auto refresh is required before self refresh entry and
    after self refresh exit.
    Power Down Mode
    The power down mode is entered when CKE is low and exited when CKE is high. Once the power down
    mode is initiated, all of the receiver circuits except clock, CKE and DLL circuit are gated off to reduce power
    consumption. All banks should be in idle state prior to entering the precharge power down mode and CKE
    should be set high at least 1tck+tIS prior to row active command. During power down mode, refresh opera-
    tions cannot be performed, therefore the device cannot remain in power down mode longer than the refresh
    period (t
    REF
    ) of the device.
    Command
    CKE
    Stable Clock
    t
    SREX
    Auto
    Refresh
    NOP
    Self
    Refresh
     
     
     
     
     
     
    CK, CK
     
    CKE
    Precharge
    Active
    Read
    NOP
    Active
    power down
    Exit
    power down
    Entry
    Active
    down
    Exit
    Entry
    Prdown
     
     
     
     
     
     
    precharge
    Command
    CK, CK
    IC4
    3R16160
    Integrated  Circuit  Solution Inc. 
    DDR001-0B
    1
    1
    /
    10
    /
    2004
    23
    
    
    
    
    
    


    


    

    相關(guān)PDF資料
    		

    PDF描述
    		

    
    

    
IC43R16160-5T
4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM

    

    
IC43R16160-5TG
4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM

    

    
IC43R16160-6T
4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM

    

    
IC43R16160-6TG
4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM

    

    
IC43R16160-7T
4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM

    

    

    

    


    


    

    相關(guān)代理商/技術(shù)參數(shù)
    		

    參數(shù)描述
    		

    
    

    
IC43R16160-5T
 制造商:ICSI 制造商全稱(chēng):Integrated Circuit Solution Inc 功能描述:4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM

    

    
IC43R16160-5TG
 制造商:ICSI 制造商全稱(chēng):Integrated Circuit Solution Inc 功能描述:4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM

    

    
IC43R16160-6T
 制造商:ICSI 制造商全稱(chēng):Integrated Circuit Solution Inc 功能描述:4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM

    

    
IC43R16160-6TG
 制造商:ICSI 制造商全稱(chēng):Integrated Circuit Solution Inc 功能描述:4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM

    

    
IC43R16160-7T
 制造商:ICSI 制造商全稱(chēng):Integrated Circuit Solution Inc 功能描述:4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM

    

    
    
    
    
	
    	
    
    
     
     
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