參數(shù)資料
型號(hào): IC42S81600-6TI(G)
英文描述: 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
中文描述: 4(2)M中的x 8(16)位× 4銀行(128 - Mbit的)同步動(dòng)態(tài)RAM
文件頁數(shù): 17/69頁
文件大?。?/td> 1118K
代理商: IC42S81600-6TI(G)
IC42S81600/IC42S81600L
IC42S16800/IC42S16800L
24
Integrated Circuit Solution Inc.
DR023-0E 6/11/2004
Write to Read Command Interval
The write command to read command interval is also a minimum of 1 cycle. Only the write data before the read command
will be written. The data bus must be Hi-Z at least one cycle prior to the first DOUT.
WRITE to READ Command Interval
Burst lengh=4
CLK
Command
CAS
latency=2
DQ
Command
CAS
latency=3
DQ
QB0
QB3
QB2
QB1
WRITE A
Write A
T0
T1
T2
T3
T4
T5
T6
T7
T8
QB0
QB3
QB2
QB1
1 cycle
Read B
DA0
Read B
DA0
Hi-Z
Read to Write Command Interval
During a read cycle, READ can be interrupted by WRITE.
DQM must be in High at least 3 clocks prior to the write command. There is a restriction to avoid a data conflict. The data
bus must be Hi-Z using DQM before Write.
相關(guān)PDF資料
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IC42S81600L-6TI(G) 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
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IC42S81600L-7TIG 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IC42S81600-7T 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S81600-7T(G) 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S81600-7TG 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S81600-7TI 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S81600-7TI(G) 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM