參數(shù)資料
型號(hào)： IC42S32800L-7BIG
英文描述： 2M x 32 Bit x 4 Banks (256-MBIT) SDRAM
中文描述： 200萬(wàn)× 32位× 4個(gè)銀行（256兆）內(nèi)存
文件頁(yè)數(shù)： 14/62頁(yè)
文件大?。?/td> 879K
代理商： IC42S32800L-7BIG
IC42S32800
IC42S32800L
14
Integrated Circuit Solution Inc.
DR046-0B 12/21/2004
WRITE with Auto Precharge
· Interrupted by a READ (with or without auto precharge): A READ to bank m will interrupt a WRITE on bank n
when registered, with the data-out ap- pearing CAS latency later. The PRECHARGE to bank n will begin after
t WR is met, where t WR begins when the READ to bank m is registered. The last valid WRITE to bank n will
be data-in registered one clock prior to the READ to bank m.
WRITE With Auto Precharge Interrupted by a READ
· Interrupted by a WRITE (with or without auto precharge): A WRITE to bank m will interrupt a WRITE on bank
n when registered. The PRECHARGE to bank n will begin after t WR is met, where t WR begins when the WRITE
to bank m is registered. The last valid data WRITE to bank n will be data registered one clock prior to a WRITE
to bank m.
WRITE With Auto Precharge Interrupted by a WRITE
D
IN
a
D
IN
d + 2
D
IN
d + 3
DON’T CARE
T2
T1
T4
T3
T6
T5
T0
COMMAND
T7
BANK n
NOP
D
IN
d + 1
WRITE - AP
BANK n
NOP
NOP
NOP
NOTE: 1. DQM is LOW.
BANK n,
COL a
BANK m,
COL d
WRITE - AP
BANK m
NOP
D
IN
a + 1
D
IN
a + 2
D
IN
d
Page Active
WRITE with Burst of 4
Write-Back
WR - BANK n
tRP - BANK n
tWR - BANK m
BANK m
ADDRESS
Internal
States
t
Page Active
WRITE with Burst of 4
Interrupt Burst, Write-Back
Precharge
T2
T1
T4
T3
T6
T5
T0
COMMAND
WRITE - AP
BANK n
NOP
NOP
NOP
NOP
NOTE: 1. DQM is LOW.
BANK n,
COL a
BANK m,
COL d
READ - AP
BANK m
NOP
NOP
Page Active
READ with Burst of 4
Internal
States
t
Page Active
WRITE with Burst of 4
Interrupt Burst, Write-Back
Precharge
WR - BANK n
RP - BANK n
t
tRP - BANKm
T7
BANK n
BANK m
ADDRESS
CLK
DQ
D
IN
a
D
IN
a + 1
D
OUT
d
D
OUT
d + 1
CAS Latency = 3 (BANK m)
DON’T CARE
相關(guān)PDF資料
PDF描述
IC42S32800L-7T 2M x 32 Bit x 4 Banks (256-MBIT) SDRAM
IC42S32800L-7TG 2M x 32 Bit x 4 Banks (256-MBIT) SDRAM
IC42S32800L-7TI 2M x 32 Bit x 4 Banks (256-MBIT) SDRAM
IC42S32800L-7TIG 2M x 32 Bit x 4 Banks (256-MBIT) SDRAM
IC43R32400 1M x 32 Bit x 4 Banks (128-MBIT) DDR SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IC42S32800L-7T 制造商:ICSI 制造商全稱(chēng):Integrated Circuit Solution Inc 功能描述:2M x 32 Bit x 4 Banks (256-MBIT) SDRAM
IC42S32800L-7TG 制造商:ICSI 制造商全稱(chēng):Integrated Circuit Solution Inc 功能描述:2M x 32 Bit x 4 Banks (256-MBIT) SDRAM
IC42S32800L-7TI 制造商:ICSI 制造商全稱(chēng):Integrated Circuit Solution Inc 功能描述:2M x 32 Bit x 4 Banks (256-MBIT) SDRAM
IC42S32800L-7TIG 制造商:ICSI 制造商全稱(chēng):Integrated Circuit Solution Inc 功能描述:2M x 32 Bit x 4 Banks (256-MBIT) SDRAM
IC42S81600 制造商:ICSI 制造商全稱(chēng):Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
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