參數(shù)資料
型號(hào): IC42S32400L-8TI
英文描述: 1M x 32 Bit x 4 Banks (128-MBIT) SDRAM
中文描述: 100萬× 32位× 4個(gè)銀行(128兆)內(nèi)存
文件頁數(shù): 50/62頁
文件大?。?/td> 899K
代理商: IC42S32400L-8TI
IC42S32400
IC42S32400L
50
Integrated Circuit Solution Inc.
DR038-0C 02/01/2005
Figure 17.2.Auto Precharge after Write Burst (Burst Length=4,CAS#Latency=2)
T0
T 1 T2
T3
T4
T5
T6
T7
T8
T9
T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
t
CK2
DBx0 DBx1 DBx2 DBx3
DAy1 DAy2
RAx
RAx
RBx
DAx0 DAx1 DAx2 DAx3
DAy0
DAy3
CBx
CAy
RBy
CBy
RBy
DAz0 DAz1 DAz2 DAz3
CAx
RBx
CAz
RAz
RAz
DBy0 DBy1 DBy2 DBy3
CLK
CKE
CS#
RAS#
CAS#
WE#
BS0,1
A10
A0-A9
DQM
DQ
Hi-Z
Write
Command
Bank A
Activate
Command
Bank A
Activate
Command
Bank A
Activate
Command
Bank B
Activate
Command
Bank B
High
Write
with
Auto Precharge
Command
Bank B
Write
with
Auto Precharge
Command
Bank B
Write
with
Auto Precharge
Command
Bank A
Write
with
Auto Precharge
Command
Bank A
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