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參數資料
| 型號： | IC42S16160 |
| 英文描述： | 4M x 16Bit x 4 Banks (256-MBIT) SDRAM |
| 中文描述： | 4米× 16 × 4銀行（256兆）內存 |
| 文件頁數： | 6/69頁 |
| 文件大?。?/td> | 1219K |
| 代理商： | IC42S16160 |
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IC42S16160
6
Integrated Circuit Solution Inc.
DR037-0A 9/05/2003
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameters
Rating
Unit
V
DD
V
DDQ
V
I
V
O
I
O
P
D
T
OPT
T
STG
Supply Voltage (with respect to V
SS
)
Supply Voltage for Output (with respect to V
SSQ
)
Input Voltage
(with respect to V
SS
)
Output Voltage
(with respect to V
SSQ
)
Short circuit output current
Power Dissipation (
T
A
= 25 °C)
Operating Temperature
Storage Temperature
–0.5 to +4.6
–0.5 to +4.6
–0.5 to V
DD
+0.5
–1.0 to V
DDQ
+0.5
50
1
0 to +70
–65 to +150
V
V
V
V
mA
W
°C
°C
Notes:
1.
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent
damage. The device is not meant to be operated under conditions outside the limits described in the
operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended
periods may affect device reliability.
DC RECOMMENDED OPERATING CONDITIONS
(
At T
A
= 0 to +70°C unless otherwise noted)
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
DD
V
DDQ
V
IH
V
IL
Supply Voltage
Supply Voltage for DQ
High Level Input Voltage (all Inputs)
Low Level Input Voltage (all Inputs)
3.0
3.0
2.0
-1.2
3.3
3.3
—
—
3.6
3.6
V
V
V
V
V
DD
+ 1.2
+0.8
Notes:
1.
2.
3.
All voltages are referenced to V
SS
=0V
V
IH
(max) for pulse width with
≤
3ns of duration
V
IL
(min) for pulse width with
≤
3ns of duration
CAPACITANCE CHARACTERISTICS
(At T
A
= 0 ~ 70°C, V
DD
= V
DDQ
= 3.3 ± 0.3V, V
SS
= V
SSQ
= 0V , unless otherwise note
d
)
Symbol
Parameter
Max.
Unit
C
IN
C
CLK
C
I
/
O
Input Capacitance, address & control pin
I
nput Capacitance, CLK pin
Data Input/Output Capacitance
5
4
pF
pF
pF
6.5
相關PDF資料 |
PDF描述 |
|---|---|
| IC42S16160-6TG | 4M x 16Bit x 4 Banks (256-MBIT) SDRAM |
| IC42S16160-6TIG | 4M x 16Bit x 4 Banks (256-MBIT) SDRAM |
| IC42S16160-7TG | 4M x 16Bit x 4 Banks (256-MBIT) SDRAM |
| IC42S16160-7TIG | 4M x 16Bit x 4 Banks (256-MBIT) SDRAM |
| IC43R16160 | 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IC42S16160-6TG | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4M x 16Bit x 4 Banks (256-MBIT) SDRAM |
| IC42S16160-6TIG | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4M x 16Bit x 4 Banks (256-MBIT) SDRAM |
| IC42S16160-7TG | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4M x 16Bit x 4 Banks (256-MBIT) SDRAM |
| IC42S16160-7TIG | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4M x 16Bit x 4 Banks (256-MBIT) SDRAM |
| IC42S16160B-7TL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256-MBIT SYNCHRONOUS DRAM |
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