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參數(shù)資料
| 型號： | IBM43RF0100 |
| 廠商： | IBM Microeletronics |
| 英文描述： | SiGe High Dynamic Range Low Noise Transistor(用于高性能，低成本應(yīng)用的硅鍺NPN低噪聲晶體管) |
| 中文描述： | 硅鍺高動態(tài)范圍低噪聲晶體管（用于高性能，低成本應(yīng)用的硅鍺npn型低噪聲晶體管） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 37K |
| 代理商： | IBM43RF0100 |
Highlights
The IBM43RF0100 silicon germanium
(SiGe) HBTdelivers high performance at
a low power consumption for a broad
range of applications.With an F
t
of over
15 GHz (measured at 3 Volts,5mA),this
HBTis well suited for baseband,IF and
RF functions in a variety of systems such
as digital wireless handsets for PCS and
cellular,wireless local loop,and wireless
LAN.This versatile device may be used
in your system in multiple capacities
ranging from a voltage controlled
oscillator (VCO) to an assortment of
amplifiers,including a transmit driver
amplifier,IF amplifier,or low noise ampli-
fier (LNA).Featuring an unprecedented
combination of high gain,low noise and
high linearity,the IBM43RF0100 enables
designers to satisfy diverse application
needs without compromising one design
advantage to maximize another.
The IBM43RF0100 exhibits excellent
device linearity efficiency — a measure of
two-tone third-order distortion ratio to the
DC power.The transistor achieves a two-
tone,third-order input intercept in excess
of +13 dBm (20 mW) with a DC power of
less than 16 mWat 1.9 GHz.
IBM Microelectronics
IBM43RF0100 Silicon Germanium HBT
SiGe transistor in a SOT-353 package
IBM Microelectronics’
Integrated Solutions
IBM Microelectronics provides vertically
integrated,advanced technology solu-
tions that help you realize the full potential
of your communications,consumer and
data processing applications.We offer
products ranging from semiconductors
and advanced packaging to printed cir-
cuit cards,boards and backplanes plus
fully tested electronic card assemblies.
We back our products with an extensive
patent portfolio and a comprehensive
network of skill,experience and services
provided through our worldwide design
centers and advanced assembly facilities
in North America,Europe and Asia.
For more information,visit our web site at
www.chips.ibm.com.
Advanced Features
High performance with simultaneous:
– Low noise
– High gain
– High linearity
– Low power dissipation
Standard SOT-353 package
Development support including
evaluation board
Part is available on tape and reel
Flexibility for simplified product design
Product Description
The IBM43RF0100 SiGe HBTis a simple
but powerful building block for high-
performance,low-cost applications.
Manufactured using IBM Microelectron-
ics’leadership SiGe BiCMOS technology,
the transistor is a fundamental compo-
nent for higher integration products
combining RF and traditional CMOS
functions.In addition to exceptional
performance,the IBM43RF0100
features built-in flexibility to simplify your
product design and a standard SOT-353
package to facilitate assembly using your
existing equipment.
IBM43RF0100
Silicon Germanium HBT
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