參數(shù)資料
型號(hào): IBM25PPC405GP-3BE200C
元件分類(lèi): 微控制器/微處理器
英文描述: 32-BIT, 200 MHz, RISC PROCESSOR, PBGA456
封裝: 35 X 35 MM, ENHANCED, PLASTIC, BGA-456
文件頁(yè)數(shù): 40/60頁(yè)
文件大?。?/td> 1480K
代理商: IBM25PPC405GP-3BE200C
PowerPC 405GP Embedded Processor Data Sheet
6/20/03
Page 45 of 60
DC Electrical Characteristics
Parameter
Symbol
Minimum
Typical
Maximum
Unit
Active Operating Current (VDD)–133MHz
IDD
TBD
mA
Active Operating Current (VDD)–200MHz
IDD
550
670
mA
Active Operating Current (VDD)–266 MHz
IDD
730
880
mA
Active Operating Current (OVDD)–133MHz
IODD
TBD
mA
Active Operating Current (OVDD)–200MHz
IODD
35
37
mA
Active Operating Current (OVDD)–266 MHz
IODD
37
40
mA
PLL VDD Input current
IPLL
16
23
mA
Active Operating Power–133 MHz
PDD
TBD
W
Active Operating Power–200 MHz
PDD
1.5
2.01
W
Active Operating Power–266 MHz
PDD
2.0
2.61
W
Note:
1. Maximum power is characterized at VDD = +2.7V, OVDD = +3.6V, TC = +85°C, across the silicon process (worse case to best
case), while running an application designed to maximize power consumption. The specifications at 200MHz correspond to
CPU = 200 MHz, PLB = 100MHz, OPB = EBC = 50MHz, PCI = 33.3 MHz. The specifications at 266MHz correspond to
CPU = 266.6MHz, PLB =133.3 MHz, OPB = EBC = 66.6 MHz, and PCI = 33.3 MHz.
2. AVDD should be derived from VDD using the following circuit:
VDD
C1
C2
C3
AVDD
L1
L1 – 2.2
H SMT inductor (equivalent to MuRata
LQH3C2R2M34) or SMT chip ferrite bead (equivalent
to MuRata BLM31A700S)
C1 – 3.3
F SMT tantalum
C2 – 0.1
F SMT monolithic ceramic capacitor with X7R
dielectric or equivalent
C3 – 0.01
F SMT monolithic ceramic capacitor with X7R
dielectric or equivalent
+
AGND
GND
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