參數(shù)資料
型號: IBM25EMPPC740LDBC4000
元件分類: 微控制器/微處理器
英文描述: 32-BIT, 400 MHz, RISC PROCESSOR, CBGA255
封裝: 21 X 21 MM, 1.27 MM PITCH, CERAMIC, BGA-255
文件頁數(shù): 3/50頁
文件大?。?/td> 600K
代理商: IBM25EMPPC740LDBC4000
5/20/99
Version 1.51
PowerPC 740 and PowerPC 750 Datasheet
Page 7
PowerPC 740 and PowerPC 750 Embedded Microprocessor
IBM CMOS 0.20 um Copper Technology EMPPC740L and EMPPC750L
Electrical and Thermal Characteristics
This section provides both AC and DC electrical specifications and thermal characteristics for the 750.
DC Electrical Characteristics
The tables in this section describe the DC electrical characteristics of the 750. The following table provides
the absolute maximum ratings.
Absolute Maximum Ratings
Characteristic
Symbol
Value
Unit
Core supply voltage
V
DD
-0.3 to 2.5
V
PLL supply voltage
AV
DD
-0.3 to 2.5
V
L2 DLL supply voltage
L2AV
DD
-0.3 to 2.5
V
60x bus supply voltage
OV
DD
-0.3 to 3.6
V
L2 bus supply voltage
L2OV
DD
-0.3 to 3.6
V
Input voltage
V
IN
-0.3 to 3.6
V
Storage temperature range
T
STG
-55 to 150
°C
Note:
1. Functional and tested operating conditions are given in Table ”Recommended Operating Conditions,” below. Absolute maximum ratings are stress rat-
ings only, and functional operation at the maximums is not guaranteed. Stresses beyond those listed may affect device reliability or cause permanent
damage to the device.
2. Caution: VIN must not exceed OVDD by more than 0.3V at any time, including during power-on reset. This is a DC specification only. VIN overshoot tran-
sients up to OVDD+1V, and undershoots down to GND-1V (both measured with the 740 in the circuit) are allowed for up to 5ns.
3. Caution: OVDD must not exceed VDD/AVDD by more than 2.0V at any time during normal operation. On power up and power down, OVDD is allowed to
exceed VDD/AVDD by up to 3.3V for up to 20 ms.
4. Caution: VDD/AVDD must not exceed OVDD by more than 0.4V during normal operation. On power up and power down, VDD/AVDD is allowed to exceed
OVDD by up to1.0V for up to 20 ms.
5.
Recommended Operating Conditions
Characteristic
Symbol
Value
Unit
Notes
Core supply voltage
V
DD
2.0
V
1, 2
PLL supply voltage
AV
DD
V
DD
V1
L2 DLL supply voltage
L2AV
DD
V
DD
V1
60x bus supply voltage
OV
DD
3.135 to 3.465
V
1
L2 bus supply voltage
L2OV
DD
3.135 to 3.465
V
1
Input voltage
V
IN
GND to OV
DD+.3V
V
1
Die-junction temperature
T
J
-40 to 105
°C
1, 2
Note:
1. These are recommended and tested operating conditions. Proper device operation outside of these conditions is not guaranteed.
2.
V
DD and TJ are specified by the Application Conditions designator in the part number. See the Part Number Key on Page 43 for more information.
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