參數(shù)資料
型號(hào)： IBM11M8735CB
廠商： IBM Microeletronics
英文描述： 8M x 72 DRAM Module(8M x 72 動(dòng)態(tài)RAM模塊)
中文描述： 8米× 72內(nèi)存（8米× 72動(dòng)態(tài)內(nèi)存模塊）
文件頁(yè)數(shù)： 10/29頁(yè)
文件大?。?/td> 597K
代理商： IBM11M8735CB
IBM11M8735C
IBM11M8735CB
8M x 72 DRAM MODULE
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 10 of 28
50H8010
SA14-4635-04
Revised 12/96
Read-Modify-Write Cycle
Symbol
Parameter
-50
-60
-70
Unit
Notes
Min
Max
Min
Max
Min
Max
t
RWC
Read-Modify-Write Cycle Time
123
—
143
—
170
—
ns
t
RWD
RAS to WE Delay Time
70
—
82
—
97
—
ns
1
t
CWD
CAS to WE Delay Time
40
—
44
—
54
—
ns
1
t
AWD
Column Address to WE Delay Time
50
—
57
—
67
—
ns
1
t
OEH
OE Command Hold Time
7
—
10
—
12
—
ns
1. t
WCS
, t
RWD
, t
CWD
, and t
AWD
are not restrictive parameters. They are included in the data sheet as electrical characteristics only. If
t
WCS
≥
t
WCS
(min.), the entire cycle is an early write cycle and the data pin will remain open circuit (high impedance) through the
entire cycle; If t
RWD
≥
t
RWD
(min.), t
CWD
≥
t
CWD
(min.)and t
AWD
≥
t
AWD
(min.), the cycle is a Read-Modify-Write cycle and the data will
contain read from the selected cell: If neither of the above sets of conditions are met, the condition of the data (at access time) is
indeterminate.
EDO Mode Cycle
Symbol
Parameter
-50
-60
-70
Units
Notes
Min.
Max.
Min.
Max.
Min.
Max.
t
HCAS
CAS Pulse Width (EDO Page Mode)
8
10K
10
10K
12
10K
ns
t
HPC
EDO Page Mode Cycle Time (Read/Write)
20
—
25
—
30
—
ns
t
HPRWC
EDO Page Mode Read Modify Write Cycle Time
63
—
72
—
84
—
ns
t
DOH
Data-out Hold Time from CAS
10
—
10
—
10
—
ns
t
WHZ
Output buffer Turn-Off Delay from WE
2
15
2
15
2
20
ns
t
WPZ
WE Pulse Width to Output Disable at CAS High
7
—
10
—
10
—
ns
t
CPRH
RAS Hold Time from CAS Precharge
35
—
40
—
45
—
ns
t
CPA
Access Time from CAS Precharge
—
35
—
40
—
45
ns
1
t
RASP
EDO Page Mode RAS Pulse Width
50
125K
60
125K
70
125K
ns
t
OEP
OE High Pulse Width
10
—
10
—
10
—
ns
t
OEHC
OE High Hold Time from CAS High
10
—
10
—
10
—
ns
1. Measured with the specified current load and 100pF at V
OL
= 0.8V and V
OH
= 2.0V.
Discontinued (9/98 - last order; 3/99 - last ship)
相關(guān)PDF資料
PDF描述
IBM11M8735H 8M x 72 DRAM Module(8M x 72 動(dòng)態(tài)RAM模塊)
IBM11M8845HB 8M x 72 Chipkill Correct DRAM Module(8M x 72 工業(yè)標(biāo)準(zhǔn)的168腳8位動(dòng)態(tài)RAM模塊（帶信號(hào)糾錯(cuò)系統(tǒng)）)
IBM11N1645L 1M x 64 DRAM Module(1M x 64 動(dòng)態(tài)RAM模塊)
IBM11N1735Q 1M x 72 DRAM Module(1M x 72 動(dòng)態(tài)RAM模塊)
IBM11N16845BB 16M x 72 Chip-Kill Protect ECC-on-DIMM Module(16M x 72 帶糾錯(cuò)代碼保護(hù)的小外形雙列直插動(dòng)態(tài)RAM模塊)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IBM14H5481 制造商:AVED Memory Products 功能描述:
IBM14H5540 制造商:AVED MEMORY PRODUCTS 功能描述: 制造商:AVED Memory Products 功能描述:
IBM17R8251 制造商:AVED Memory Products 功能描述:
IBM17R8252 制造商:AVED Memory Products 功能描述:
IBM1805T 制造商:Schneider Electric 功能描述:IBM1805T
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*