參數(shù)資料
型號： IBM0116400B
廠商： IBM Microeletronics
英文描述： 4M x 4 12/10 DRAM(16M位 動態(tài)RAM（帶22條地址線，其中12條為行地址選通，10條為列地址選通）)
中文描述： 4米× 4 12月10日的DRAM（1,600位動態(tài)隨機(jī)存儲器（帶22條地址線，其中12條為行地址選通，10條為列地址選通））
文件頁數(shù)： 11/28頁
文件大?。?/td> 512K
代理商： IBM0116400B
IBM0116400
IBM0116400B IBM0116400P
4M x 4 12/10 DRAM
IBM0116400M
43G9396
SA14-4203-06
Revised 4/97
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 11 of 28
Refresh Cycle
Symbol
Parameter
-50
-60
Units
Notes
Min.
Max.
Min.
Max.
t
CSR
CAS Setup Time
(CAS before RAS Refresh Cycle)
5
—
5
—
ns
t
CHR
CAS Hold Time
(CAS before RAS Refresh Cycle)
10
—
10
—
ns
t
WRP
WE Setup Time
(CAS before RAS Refresh Cycle)
10
—
10
—
ns
t
WRH
WE Hold Time
(CAS before RAS Cycle)
10
—
10
—
ns
t
RPC
RAS Precharge to CAS Hold Time
5
—
5
—
ns
Self Refresh Cycle
- Low Power Version Only
Symbol
Parameter
-50
-60
Units
Notes
Min.
Max.
Min.
Max.
t
RASS
RAS Pulse Width
During Self Refresh Cycle
100
—
100
—
μ
s
1
t
RPS
RAS Precharge Time
During Self Refresh Cycle
89
—
104
—
ns
1
t
CHS
CAS Hold Time From RAS Rising
During Self Refresh Cycle
-50
—
-50
—
ns
1, 2
t
CHD
CAS Hold Time From RAS Falling
During Self Refresh Cycle
350
—
350
—
μ
s
1, 2
1. When using Self Refresh mode, the following refresh operations must be performed to ensure proper DRAM operation:
If row addresses are being refreshed in an EVENLY DISTRIBUTED manner over the refresh interval using CBR refresh cycles,
then only one CBR cycle must be performed immediately after exit from Self Refresh.
If row addresses are being refreshed in any other manner (ROR- Distributed/Burst; or CBR-Burst) over the refresh interval, then a
full set of row refreshes must be performed immediately before entry to and immediately after exit from Self Refresh.
2. If t
RASS
> t
CHD
(min) then t
CHD
applies. If t
RASS
≤
t
CHD
(min) then t
CHS
applies.
Refresh
Symbol
Parameter
-50
-60
Units
Notes
Min.
Max.
Min.
Max.
t
REF
Refresh Period
SP version
—
64
—
64
ms
1
LP version
—
256
—
256
1. 4096 cycles.
Discontinued (9/98 - last order; 3/99 last ship)
相關(guān)PDF資料
PDF描述
IBM0116400M 4M x 4 12/10 DRAM(16M位 動態(tài)RAM（帶22條地址線，其中12條為行地址選通，10條為列地址選通）)
IBM0116400P 4M x 4 12/10 DRAM(16M位 動態(tài)RAM（帶22條地址線，其中12條為行地址選通，10條為列地址選通）)
IBM0116400 4M x 4 12/10 DRAM(16M位 動態(tài)RAM（帶22條地址線，其中12條為行地址選通，10條為列地址選通）)
IBM0164165B 4M x 16 13/9 EDO DRAM(4M x 16 動態(tài)RAM（超頁面模式讀寫并帶22條地址線，其中13條為行地址選通，9條為列地址選通）)
IBM0164165P 4M x 16 13/9 EDO DRAM(4M x 16 動態(tài)RAM（超頁面模式讀寫并帶22條地址線，其中13條為行地址選通，9條為列地址選通）)
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