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參數(shù)資料
| 型號： | HZM6.8NB3TL |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 6.8 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 封裝： | MPAK-3 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 193K |
| 代理商： | HZM6.8NB3TL |
HZM-N Series
Rev.5.00, Decl.14.2004, page 3 of 7
Zener Voltage
Reverse Current
Dynamic Resistance
VZ (V)*
1
Test
Condition
IR (A)
Test
Condition
rd ()
Test
Condition
Type
Grade
Min
Max
IZ (mA)
Max
VR (V)
Max
IZ (mA)
B
5.86
6.53
B1
5.86
6.12
B2
6.06
6.33
HZM6.2N
B3
6.26
6.53
5
2
3.0
50
5
B
6.47
7.14
B1
6.47
6.73
B2
6.65
6.93
HZM6.8N
B3
6.86
7.14
5
2
3.5
30
5
B
7.06
7.84
B1
7.06
7.36
B2
7.28
7.60
HZM7.5N
B3
7.52
7.84
5
2
4.0
30
5
B
7.76
8.64
B1
7.76
8.10
B2
8.02
8.36
HZM8.2N
B3
8.28
8.64
5
2
5.0
30
5
B
8.56
9.55
B1
8.56
8.93
B2
8.85
9.23
HZM9.1N
B3
9.15
9.55
5
2
6.0
30
5
B
9.45
10.55
B1
9.45
9.87
B2
9.77
10.21
HZM10N
B3
10.11
10.55
5
2
7.0
30
5
B
10.44
11.56
B1
10.44
10.88
B2
10.76
11.22
HZM11N
B3
11.10
11.56
5
2
8.0
30
5
B
11.42
12.60
B1
11.42
11.90
B2
11.74
12.24
HZM12N
B3
12.08
12.60
5
2
9.0
35
5
B
12.47
13.96
B1
12.47
13.03
B2
12.91
13.49
HZM13N
B3
13.37
13.96
5
2
10.0
35
5
B
13.84
15.52
B1
13.84
14.46
B2
14.34
14.98
5M15N
B3
14.85
15.52
5
2
11.0
40
5
B
15.37
17.09
B1
15.37
16.01
B2
15.85
16.51
HZM16N
B3
16.35
17.09
5
2
12.0
40
5
B
16.94
19.03
B1
16.94
17.70
B2
17.56
18.35
HZM18N
B3
18.21
19.03
5
2
13.0
45
5
Note:
1. Tested with pulse (PW = 40 ms)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HZM68ZMFA | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon Planar Zener Diode for Surge Absorb |
| HZM68ZWA | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon Epitaxial Planar Zener Diode for Surge Absorb |
| HZM7.5FA | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Surge Absorb |
| HZM7.5N | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilizer |
| HZM7.5NB | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilizer |
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