參數(shù)資料
型號： HZIP23-P-1.27F
廠商： Toshiba Corporation
英文描述： Intelligent Power Device High Voltage Monolithic Silicon Power IC
中文描述： 智能功率器件單片硅高壓功率IC
文件頁數(shù)： 8/21頁
文件大小： 240K
代理商： HZIP23-P-1.27F
TENTATIVE TPD4113K
2005-05-20
8
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
V
BB
50
280
450
Operating power supply voltage
V
CC
13.5
15
16.5
V
I
BB
V
BB
=
450 V
0
0.5
I
CC
V
CC
=
15 V
1.1
5
mA
I
BS (ON)
V
BS
=
15 V, high side ON
260
410
Current dissipation
I
BS (OFF)
V
BS
=
15 V, high side OFF
230
370
μ
A
V
IH
V
IN
=
“H”
3.5
Input voltage
V
IL
V
IN
=
“L”
1.5
V
I
IH
V
IN
=
5
150
Input current
I
IL
V
IN
=
0 V
100
μ
A
V
CEsat
H
V
CC
=
15 V, IC
=
0.5 A
2.3
3
Output saturation voltage
V
CEsat
L
V
CC
=
15 V, IC
=
0.5 A
2.3
3
V
V
F
H
IF
=
0.5 A, high side
1.6
2.0
FRD forward voltage
V
F
L
IF
=
0.5 A, low side
1.6
2.0
V
Regulator voltage
V
REG
IF
=
500
0.9
1.2
V
BSD forward voltage
V
F
(BSD)
V
CC
=
15 V, I
O
=
30 mA
6.5
7
7.5
V
Current limiting voltage
V
R
0.46
0.5
0.54
V
Current limiting dead time
Dt
2.3
3.3
4.4
s
Thermal shutdown temperature
TSD
V
CC
=
15 V
135
150
180
Thermal shutdown hysteresis
TSD
V
CC
=
15 V
50
V
CC
under voltage protection
V
CC
UVD
10
11
12
V
V
CC
under voltage protection recovery
V
CC
UVR
10.5
11.5
12.5
V
V
BS
under voltage protection
V
BS
UVD
8
9
9.5
V
V
BS
under voltage protection recovery
V
BS
UVR
8.5
9.5
10.5
V
DIAG saturation voltage
V
DIAGsat
I
DIAG
=5mA
0.5
V
Output on delay time
t
on
V
BB
=
280 V, IC
=
0.5 A
1.5
3
μ
s
Output off delay time
t
off
V
BB
=
280 V, IC
=
0.5 A
1.2
3
μ
s
Dead time
tdead
V
BB
=
280 V, IC
=
0.5 A
1.4
μ
s
FRD reverse recovery time
t
rr
V
BB
=
280 V, IC
=
0.5 A
200
ns
相關(guān)PDF資料
PDF描述
HZIP23-P-1.27G Intelligent Power Device High Voltage Monolithic Silicon Power IC
HZIP23-P-1.27H Intelligent Power Device High Voltage Monolithic Silicon Power IC
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HZK6B SWITCH, 3PDT; Thread size:1/4 x 40UNS; Switch function type:3PDT On-On; Current, contact @ contact voltage AC max:3A; Current, contact @ contact voltage DC max:8A; Material, contact:Silver; Resistance, contact:10mR; Temp, op. RoHS Compliant: Yes
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HZK 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diodes for Stabilized Power Supply
HZK11A 制造商:SEMTECH_ELEC 制造商全稱:SEMTECH ELECTRONICS LTD. 功能描述:SILICON EPITAXIAL PLANAR ZENER DIODES for Stabilized Power Supply
HZK11AL 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon Epitaxial Planar Zener Diodes for Stabilized Power Supply
HZK11B 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diodes for Stabilized Power Supply
HZK11BL 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon Epitaxial Planar Zener Diodes for Stabilized Power Supply
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