參數(shù)資料
型號(hào): HZIP23-P-1.27F
廠商: Toshiba Corporation
英文描述: Intelligent Power Device High Voltage Monolithic Silicon Power IC
中文描述: 智能功率器件單片硅高壓功率IC
文件頁(yè)數(shù): 7/21頁(yè)
文件大小: 240K
代理商: HZIP23-P-1.27F
TENTATIVE TPD4113K
2005-05-20
7
Truth Table
Input
Top arm
Bottom arm
Mode
phase
phase
phase
phase
phase
phase
DIAG
Normal
Over current
Thermal shutdown
Under voltage
Notes: Release of Thermal shutdown protection and under voltage protection depends release of a self-reset and over current
protection on an all "L" input.
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Symbol
Rating
Unit
V
BB
500
V
Power supply voltage
V
CC
18
V
Output current (DC)
I
out
1
A
Output current (pulse)
I
out
2
A
Input voltage
V
IN
0.5~7
V
V
REG
current
I
REG
50
mA
Power dissipation (Ta
=
25°C)
P
C
4
W
Power dissipation (Tc
=
25°C)
P
C
20
W
Operating temperature
T
jopr
20~135
°C
Junction temperature
T
j
150
°C
Storage temperature
T
stg
55~150
°C
Lead-heat sink isolation voltage
Vhs
1000 (1 min)
Vrms
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