參數(shù)資料
型號(hào): HYS72V4120GU-10
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 3.3V 4M x 64-Bit 2 BANK SDRAM Module 3.3V 4M x 72-Bit 2 BANK SDRAM Module
中文描述: 4M X 72 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168
封裝: DIMM-168
文件頁數(shù): 1/11頁
文件大?。?/td> 72K
代理商: HYS72V4120GU-10
Semiconductor Group
1
3.3V 4M x 64-Bit 2 BANK SDRAM Module
3.3V 4M x 72-Bit 2 BANK SDRAM Module
168 pin unbuffered DIMM Modules
HYS64V4120GU-10
HYS72V4120GU-10
168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM Module
for PC main memory applications
2 bank 4M x 64, 4M x 72 organisation
Optimized for byte-write non-parity or ECC applications
Fully PC66 layout compatible
JEDEC standard Synchronous DRAMs (SDRAM)
Performance:
Single +3.3V(
±
0.3V ) power supply
Programmable CAS Latency, Burst Length and Wrap Sequence
(Sequential & Interleave)
Auto Refresh (CBR) and Self Refresh
Decoupling capacitors mounted on substrate
All inputs, outputs are LVTTL compatible
Serial Presence Detect with E
2
PROM
Utilizes 16 / 18 2M x 8 SDRAMs in TSOPII-44 packages
4096 refresh cycles every 64 ms
Gold contact pad
Card Size: 133,35 mm x 29.21 mm x 4,00 mm for HYS64(72)V4120GU
-10
f
CK
Max. Clock frequency
66 MHz @ CL=2
100 MHz @ CL=3
t
AC
Max. access time from clock
9 ns @ CL=2
8 ns @ CL=3
2.98
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