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參數(shù)資料
| 型號： | HYS64V4120GU |
| 廠商： | SIEMENS AG |
| 英文描述： | 3.3V 4M x 64-Bit 2 BANK SDRAM Module 3.3V 4M x 72-Bit 2 BANK SDRAM Module |
| 中文描述： | 3.3 4米× 64位2銀行內(nèi)存模塊3.3分× 72位，2個銀行內(nèi)存模塊 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 72K |
| 代理商： | HYS64V4120GU |
Semiconductor Group
1
3.3V 4M x 64-Bit 2 BANK SDRAM Module
3.3V 4M x 72-Bit 2 BANK SDRAM Module
168 pin unbuffered DIMM Modules
HYS64V4120GU-10
HYS72V4120GU-10
168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM Module
for PC main memory applications
2 bank 4M x 64, 4M x 72 organisation
Optimized for byte-write non-parity or ECC applications
Fully PC66 layout compatible
JEDEC standard Synchronous DRAMs (SDRAM)
Performance:
Single +3.3V(
±
0.3V ) power supply
Programmable CAS Latency, Burst Length and Wrap Sequence
(Sequential & Interleave)
Auto Refresh (CBR) and Self Refresh
Decoupling capacitors mounted on substrate
All inputs, outputs are LVTTL compatible
Serial Presence Detect with E
2
PROM
Utilizes 16 / 18 2M x 8 SDRAMs in TSOPII-44 packages
4096 refresh cycles every 64 ms
Gold contact pad
Card Size: 133,35 mm x 29.21 mm x 4,00 mm for HYS64(72)V4120GU
-10
f
CK
Max. Clock frequency
66 MHz @ CL=2
100 MHz @ CL=3
t
AC
Max. access time from clock
9 ns @ CL=2
8 ns @ CL=3
2.98
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYS64V4120GU-10 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 64-Bit 2 BANK SDRAM Module 3.3V 4M x 72-Bit 2 BANK SDRAM Module |
| HYS64V4200GDL-7.5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HYS64V4200GU-10 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module |
| HYS64V4200GU-8 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module |
| HYS64V4200GU-8B | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module |
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