參數(shù)資料
型號: HYS72T128000EU-2.5-C2
廠商: QIMONDA AG
元件分類: DRAM
英文描述: 128M X 72 DDR DRAM MODULE, 0.4 ns, DMA240
封裝: GREEN, UDIMM-240
文件頁數(shù): 13/59頁
文件大?。?/td> 3071K
代理商: HYS72T128000EU-2.5-C2
HYS[64/72]T[128/256]0x0EU–[19F/1.9/25F/2.5/3S]–C2
Unbuffered DDR2 SDRAM Modules
Internet Data Sheet
Rev. 1.00, 2008-06
20
12032007-I9KE-FFWO
TABLE 15
DRAM Component Timing Parameter by Speed Grade - DDR2–800 and DDR2–667
Parameter
Symbol
DDR2–800
DDR2–667
Unit
Min.
Max.
Min.
Max.
DQ output access time from CK / CK
t
AC
–400
+400
–450
+450
ps
CAS to CAS command delay
t
CCD
2—
nCK
Average clock high pulse width
t
CH.AVG
0.48
0.52
0.48
0.52
t
CK.AVG
Average clock period
t
CK.AVG
2500
8000
3000
8000
ps
CKE minimum pulse width ( high and
low pulse width)
t
CKE
3—
nCK
Average clock low pulse width
t
CL.AVG
0.48
0.52
0.48
0.52
t
CK.AVG
Auto-Precharge write recovery +
precharge time
t
DAL
WR +
t
nRP
—WR +
t
nRP
—nCK
Minimum time clocks remain ON after
CKE asynchronously drops LOW
t
DELAY
t
IS + tCK .AVG
+
t
IH
––
t
IS +
t
CK .AVG + tIH
––
ns
DQ and DM input hold time
t
DH.BASE
125
––
175
––
ps
DQ and DM input pulse width for each
input
t
DIPW
0.35
0.35
t
CK.AVG
DQS input high pulse width
t
DQSH
0.35
0.35
t
CK.AVG
DQS output access time from CK / CK
t
DQSCK
–350
+350
–400
+400
ps
DQS input low pulse width
t
DQSL
0.35
0.35
t
CK.AVG
DQS-DQ skew for DQS & associated
DQ signals
t
DQSQ
200
240
ps
DQS latching rising transition to
associated clock edges
t
DQSS
– 0.25
+ 0.25
– 0.25
+ 0.25
t
CK.AVG
DQ and DM input setup time
t
DS.BASE
50
––
100
––
ps
DQS falling edge hold time from CK
t
DSH
0.2
0.2
t
CK.AVG
DQS falling edge to CK setup time
t
DSS
0.2
0.2
t
CK.AVG
Four Activate Window for 1KB page
size products
t
FAW
35
37.5
ns
Four Activate Window for 2KB page
size products
t
FAW
45
50
ns
CK half pulse width
t
HP
Min(
t
CH.ABS,
t
CL.ABS)
__
Min(
t
CH.ABS,
t
CL.ABS)
__
ps
Data-out high-impedance time from
CK / CK
t
HZ
t
AC.MAX
t
AC.MAX
ps
Address and control input hold time
t
IH.BASE
250
275
ps
Control & address input pulse width
for each input
t
IPW
0.6
0.6
t
CK.AVG
Address and control input setup time
t
IS.BASE
175
200
ps
DQ low impedance time from CK/CK
t
LZ.DQ
2x
t
AC.MIN
t
AC.MAX
2x
t
AC.MIN
t
AC.MAX
ps
DQS/DQS low-impedance time from
CK / CK
t
LZ.DQS
t
AC.MIN
t
AC.MAX
t
AC.MIN
t
AC.MAX
ps
相關(guān)PDF資料
PDF描述
HYS72T64000EP-3.7-B2 64M X 72 DDR DRAM MODULE, DMA240
HZ20-1 19.25 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
HZ6B1L 5.65 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
HZ9.1CP 9.65 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41
HZB6.8MWA 6.8 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYS72T128000GR 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DDR2 Registered Memory Modules
HYS72T128000GR-37-A 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DDR2 Registered Memory Modules
HYS72T128000GR-5-A 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DDR2 Registered Memory Modules
HYS72T128000HP 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:240-Pin Registered DDR2 SDRAM Modules
HYS72T128000HP-2.5-B 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:240-Pin Registered DDR2 SDRAM Modules