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參數(shù)資料
| 型號(hào)： | HYS64V16300GU-7-C2 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | 3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules |
| 中文描述： | 3.3伏16米x 64/72-Bit 1銀行128MByte SDRAM的模塊3.3伏32M的x 64/72-Bit 2銀行256MB的內(nèi)存模塊168引腳無緩沖DIMM模塊 |
| 文件頁數(shù)： | 19/20頁 |
| 文件大?。?/td> | 322K |
| 代理商： | HYS64V16300GU-7-C2 |
HYS 64/72V16300/32220GU
SDRAM-Modules
INFINEON Technologies
8
9.01
Operating Currents per SDRAM Component
T
A = 0 to 70
oC, V
DD = 3.3 V ±0.3 V
Parameter
Test
Condition
Symbol
-7 /7.5
-8
Unit Note
max.
Operating Current
t
RC = tRCMIN., tCK = tCKMIN.
Outputs open, Burst Length = 4, CL = 3
All banks operated in random access,
all banks operated in ping-pong manner
to maximize gapless data access
–
I
CC1
160
150
mA
1)
Precharge Standby Current
in Power Down Mode
CS =
V
IH (min.), CKE ≤ VIL(MAX)
t
CK =min.
I
CC2P
1.5
mA
1)
Precharge Stand-by Current
in Non-Power Down Mode
CS =
V
IH (MIN.), CKE ≥ VIH(MIN)
t
CK =min.
I
CC2N
40
35
mA
1)
No Operating Current
t
CK = min., CS = VIH(MIN),
active state (max. 4 banks)
CKE
≥ V
IH(MIN.)
I
CC3N
50
45
mA
1)
CKE
≤ V
IL(MAX.)
I
CC3P
10
mA
1)
Burst Operating Current
t
CK =min.,
Read command cycling
–
I
CC4
100
90
mA
1), 2)
Auto-Refresh Current
t
CK =min.,
Auto-Refresh command cycling
–
I
CC5
230
210
mA
1)
Self-Refresh Current
Self-Refresh Mode, CKE = 0.2 V
–
I
CC6
1.5
mA
1)
1. These parameters depend on the cycle rate. These values are measured at 133 MHz for -7 and 7.5 modules
and at 100 Mhz for -8 modules. Input signals are changed once during t
CK, except for ICC6 and for standby
currents when t
CK = infinity. All values are shown per memory component.
2. These parameters are measured with continuous data stream during read access and all DQ toggling. CL = 3
and BL = 4 assumed and the data-out current is excluded
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYS64V16300GU-7.5-C2 | 3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules |
| HYS64V32220GU-7-C2 | 32M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 |
| HYS72V2100GU-10 | 2M X 72 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168 |
| HZ3ALL | 2.7 V, 0.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
| HZ5BLL | 4.8 V, 0.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYS64V16300GU-8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HYS64V16300GU-8-C2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules |
| HYS64V16302GU | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3 V 16M 】 64-Bit, 128MByte SDRAM Module 168-pin Unbuffered DIMM Modules |
| HYS64V16302GU-7.5-C2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:SDRAM|16MX64|CMOS|DIMM|168PIN|PLASTIC |
| HYS64V16302GU-7.5-D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
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