參數(shù)資料
型號: HYS 64V64220GU
廠商: SIEMENS AG
英文描述: 3.3 V 64M 64-Bit SDRAM Modules(3.3 V 64M 64/72-Bit 2 個存儲體的 SDRAM 模塊)
中文描述: 3.3伏6400 64位SDRAM模塊(3.3伏6400 64/72-Bit 2個存儲體的內(nèi)存模塊)
文件頁數(shù): 1/17頁
文件大小: 131K
代理商: HYS 64V64220GU
Data Book
1
3.00
HYS 64/72V64220GU
SDRAM-Modules
3.3 V 64M
×
64/72-Bit SDRAM Modules
168-pin Unbuffered DIMM Modules
The HYS 64V64220GU and HYS 72V64220GU are industry standard 168-pin 8-byte Dual in-line
Memory Modules (DIMMs) which are organized as 64M
×
64 and 64M
×
72 in two banks high speed
memory arrays designed with 256M Synchronous DRAMs (SDRAMs) for non-parity and ECC
applications. The DIMMs use 7-5 speed sorted 256 Mbit Synchronous DRAMs (SDRAMs) to meet
the PC133-333 requirements and -8, -8A and -8B components for the standard PC100 applications.
Decoupling capacitors are mounted on the PC board. The PC board design is according to INTEL’s
PC100 module specification. The DIMMs have a serial presence detect, implemented with a serial
E
2
PROM using the 2-pin I
2
C protocol. The first 128 bytes are utilized by the DIMM manufacturer
and the second 128 bytes are available to the end user. All Infineon 168-pin DIMMs provide a high
performance, flexible 8-byte interface in a 133.35 mm long footprint, with 1.25“ (31.75 mm) height.
168-pin unbuffered 8 Byte Dual-In-Line
SDRAM Modules for PC main memory
applications
PC100 and PC133 versions
Two bank 64M
×
64 and 64M
×
72
organization
Optimized for byte-write non-parity or ECC
applications
Fully PC board layout compatible to INTEL’s
Rev. 1.0 module specification
JEDEC standard Synchronous DRAMs
(SDRAM
Programmed Latencies:
Single + 3.3 V (
±
0.3 V) power supply
Programmable CAS Latency, Burst Length,
and Wrap Sequence (Sequential &
Interleave)
Auto Refresh (CBR) and Self Refresh
Decoupling capacitors mounted on substrate
All inputs and outputs are LVTTL compatible
Serial Presence Detect with E
2
PROM
Uses Infineon 256 Mbit SDRAM components
in 32M
×
8 organization and TSOPII-54
packages
Gold contact pad, card size:
133.35 mm
×
31.75 mm
×
4.00 mm
Product Speed
CL
t
RCD
3
t
RP
3
-7.5
PC133
3
-8
PC100
2
2
2
-8A
PC100
3
2
2
-8B
PC100
3
2
3
SDRAM Performance:
-7.5
-8
-8A
-8B
Unit
PC133
PC100
PC100
PC100
f
CK
t
AC
Clock Frequency (max.)
133
100
100
100
MHz
Clock Access time
5.4
6
6
6
ns
相關(guān)PDF資料
PDF描述
HYS 72V64220GU 3.3 V 64M 72-Bit SDRAM Modules(3.3 V 64M 64/72-Bit 2 個存儲體的 SDRAM 模塊)
HZ16-1 Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode
HZ22-1 Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode
HZ22-2 Tactile Switch; Operating Force Max:100gf; Circuitry:SPST-NO; Switch Operation:(On)-Off; Actuator Style:Flat Plunger; Contact Current Max:50mA; Switch Terminals:Through Hole; Mounting Type:PCB
HZ22-3 Tactile Switch; Operating Force Max:150gf; Circuitry:SPST-NO; Switch Operation:(On)-Off; Actuator Style:Flat Plunger; Contact Current Max:50mA; Switch Terminals:Through Hole; Mounting Type:PCB
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