參數(shù)資料
型號: HYM72V8035GS-50
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 8M x 72-Bit EDO- DRAM Module
中文描述: 8M X 72 EDO DRAM MODULE, 50 ns, DMA168
封裝: DIMM-168
文件頁數(shù): 6/11頁
文件大?。?/td> 65K
代理商: HYM72V8035GS-50
Semiconductor Group
6
HYM72V8025/35GS-50/-60
8M x 72-ECC EDO-Module
Capacitance
T
A
= 0 to 70 °C;
V
CC
= 3.3 V
±
0.3 V;
f
= 1 MHz
Average
V
CC
supply current during RAS
only refresh cycles:
-50 version
-60 version
(RAS cycling, CAS =
V
IH
, t
RC
=
t
RC
min.)
Average
V
CC
supply current during hyper
page mode (EDO):
I
CC3
1260
1080
mA
mA
2) 4)
-50 version
-60 version
(RAS =
V
IL,
CAS, address cycling
t
PC
=
t
PC
min.)
Standby
V
CC
supply current
(RAS = CAS =
V
CC
– 0.2 V,
one address change within 15,6
μ
s trc)
Average
V
CC
supply current during
CAS-before-RAS refresh mode:
I
CC4
945
765
mA
mA
2) 3) 4)
I
CC5
30
mA
-50 version
-60 version
(RAS, CAS cycling
, t
RC
=
t
RC
min.)
I
CC6
1260
1080
mA
mA
2) 4)
Parameter
Symbol
Limit Values
Unit
min.
max.
Input capacitance (A0 to A11,B0)
C
I1
C
I2
C
I3
C
I4
C
IO1
10
pF
Input capacitance (RAS0, RAS2)
50
pF
Input capacitance (CAS0, CAS4)
15
pF
Input capacitance (WE0,WE2,OE0,OE2)
15
pF
I/O capacitance (DQ0-DQ71)
15
pF
Parameter
Symbol
Limit Values
Unit
Test
Condition
min.
max.
相關PDF資料
PDF描述
HYM72V8025GS-50- 8M x 72-Bit EDO- DRAM Module
HYM91000L-60 x(8+1) Fast Page Mode DRAM Module
HYM91000L-70 x(8+1) Fast Page Mode DRAM Module
HYM91000L-80 x(8+1) Fast Page Mode DRAM Module
HYM91000LL-60 x(8+1) Fast Page Mode DRAM Module
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