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參數(shù)資料
| 型號： | HYM64V4005GU-50 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module |
| 中文描述： | 4M X 64 EDO DRAM MODULE, 50 ns, DMA168 |
| 封裝： | DIMM-168 |
| 文件頁數(shù)： | 11/17頁 |
| 文件大小： | 95K |
| 代理商： | HYM64V4005GU-50 |
HYM64(72)V4005/45GU-50/-60
4M x 64/72 DRAM Module
Semiconductor Group
11
AC Characteristics
5)6)
T
A
= 0 to 70 °C,
V
CC
= 3.3 V
±
0.3 V,
t
T
= 2 ns
16E
Parameter
Symbol
Limit Values
Unit
Note
-50
-60
min.
max.
min.
max.
common parameters
Random read or write cycle time
t
RC
t
RP
t
RAS
t
CAS
t
ASR
t
RAH
t
ASC
t
CAH
t
RCD
t
RAD
t
RSH
t
CSH
t
CRP
t
T
t
REF
t
REF
84
–
104
–
ns
RAS precharge time
30
–
40
–
ns
RAS pulse width
50
10k
60
10k
ns
CAS pulse width
8
10k
10
10k
ns
Row address setup time
0
–
0
–
ns
Row address hold time
8
–
10
–
ns
Column address setup time
0
–
0
–
ns
Column address hold time
8
–
10
–
ns
RAS to CAS delay time
12
37
14
45
ns
RAS to column address delay
RAS hold time
10
13
25
12
15
30
–
ns
ns
CAS hold time
40
50
–
ns
CAS to RAS precharge time
5
–
5
–
ns
Transition time (rise and fall)
1
50
1
50
ns
7
Refresh period for 2k-refresh
–
32
–
32
ms
Refresh period for 4k-refresh
–
64
–
64
ms
Read Cycle
Access time from RAS
t
RAC
t
CAC
t
AA
t
OEA
t
RAL
t
RCS
t
RCH
t
RRH
–
50
–
60
ns
8, 9
Access time from CAS
–
13
–
15
ns
8, 9
Access time from column address
–
25
–
30
ns
8,10
OE access time
–
13
–
15
ns
Column address to RAS lead time
25
–
30
–
ns
Read command setup time
0
–
0
–
ns
Read command hold time
0
–
0
–
ns
11
Read command hold time referenced to
RAS
0
–
0
–
ns
11
CAS to output in low-Z
t
CLZ
t
OFF
0
–
0
–
ns
8
Output buffer turn-off delay
0
13
0
15
ns
12
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PDF描述 |
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| HYM64V4005GU-60 | GIGASTATION2 SNAP FITTINGF CONN, IVORY |
| HYM64V4045GU-50 | 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module |
| HYM64V4045GU-60 | 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module |
| HYM72V4045GU-60 | 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module |
| HYM72V8000GS-50 | Tools, Extractors; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYM64V4005GU-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module |
| HYM64V4005GU-70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 EDO Page Mode DRAM Module |
| HYM64V4045GU-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module |
| HYM64V4045GU-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module |
| HYM64V4045GU-70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 EDO Page Mode DRAM Module |
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