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參數(shù)資料
| 型號： | HYM324020S |
| 廠商： | SIEMENS AG |
| 英文描述： | 4M x 32-Bit Dynamic RAM Module |
| 中文描述： | 4米× 32位動態(tài)隨機(jī)存儲器模塊 |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 59K |
| 代理商： | HYM324020S |
Semiconductor Group
5
HYM 324020S/GS-50/-60
4M x 32-Bit
Absolute Maximum Ratings
Operation temperature range .........................................................................................0 to + 70 °C
Storage temperature range.........................................................................................– 55 to 125 °C
Input/output voltage ............................................................................–0.5V to min (Vcc+0.5, 7.0) V
Power supply voltage...................................................................................................... – 1 to + 7 V
Power dissipation................................................................................................................... 6.72 W
Data out current (short circuit) ................................................................................................ 50 mA
Note:
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
T
A
= 0 to 70 °C,
V
SS
= 0 V,
V
CC
= 5 V
±
10 %;
t
T
= 5 ns
Parameter
Symbol
Limit Values
Unit Test
Condition
min.
max.
Input high voltage
V
IH
V
IL
V
OH
V
OL
I
I(L)
2.4
Vcc+0.5
V
1)
Input low voltage
Output high voltage (
I
OUT
= – 5 mA)
Output low voltage (
I
OUT
= 4.2 mA)
Input leakage current
(0 V
≤
V
IH
≤
Vcc + 0.3V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V
≤
V
OUT
≤
Vcc + 0.3V)
Average
V
CC
supply current:
– 0.5
0.8
V
1)
2.4
–
V
1)
–
0.4
V
μ
A
1)
– 20
20
1)
I
O(L)
– 10
10
μ
A
1)
-50 ns version
-60 ns version
(RAS, CAS, address cycling:
t
RC
=
t
RC
min.)
Standby
V
CC
supply current
(RAS = CAS =
V
IH
)
Average
V
CC
supply current, during RAS-only
refresh cycles:
I
CC1
–
–
960
880
mA
mA
2) 3) 4)
2) 3) 4)
I
CC2
–
16
mA
–
-50 ns version
-60 ns version
(RAS cycling, CAS =
V
I,H,
t
RC
=
t
RC
min.)
Average
V
CC
supply current,
during fast page mode:
I
CC3
–
–
960
880
mA
mA
2) 4)
2) 4)
-50 ns version
-60 ns version
(RAS =
V
IL
, CAS, address cycling:
t
PC
=
t
PC
min.)
I
CC4
–
–
320
280
mA
mA
2) 3) 4)
2) 3) 4)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYM324020S-50 | 4M x 32-Bit Dynamic RAM Module |
| HYM324020S-70 | 4M x 32-Bit Dynamic RAM Module |
| HYM324020GS-50 | 4M x 32-Bit Dynamic RAM Module |
| HYM364035S | 4M x 36-Bit EDO-DRAM Module |
| HYM364035S-60 | 4M x 36-Bit EDO-DRAM Module |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYM324020S-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 32-Bit Dynamic RAM Module |
| HYM324020S-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 32-Bit Dynamic RAM Module |
| HYM324020S-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 32-Bit Dynamic RAM Module |
| HYM324020S-GS50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 32-Bit Dynamic RAM Module |
| HYM324025GDL-50 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 EDO Page Mode DRAM Module |
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