參數(shù)資料
型號(hào): HYM364035S-60
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 4M x 36-Bit EDO-DRAM Module
中文描述: 4M X 36 EDO DRAM MODULE, 60 ns, SMA72
封裝: SIMM-72
文件頁數(shù): 1/10頁
文件大?。?/td> 476K
代理商: HYM364035S-60
Semiconductor Group
1
4M
×
36-Bit EDO-DRAM Module
HYM 364035S/GS-60
Advanced Information
4 194 304 words by 36-Bit organization
Fast access and cycle time
60 ns RAS access time
15 ns CAS access time
104 ns cycle time
Hyper page mode (EDO) capability
25 ns cycle time
Single + 5 V (
±
10 %) supply
Low power dissipation
max. 7260 mW active
CMOS – 66 mW standby
TTL
– 132 mW standby
CAS-before-RAS refresh
RAS-only-refresh
Hidden-refresh
12 decoupling capacitors mounted on substrate
All inputs, outputs and clocks fully TTL compatible
72 pin Single in-Line Memory Module (L-SIM-72) with 22.9 mm (900 mil) height
Utilizes 12 4M x 3 DRAM’s in 300 mil SOJ packages
2048 refresh cycles / 32 ms
Optimized for use in byte-write parity applications
Tin-Lead contact pads (HYM 364035S-60)
Gold contact pads (HYM 364035GS-60)
4.96
相關(guān)PDF資料
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