參數(shù)資料
型號(hào): HYM322160S
廠商: SIEMENS AG
英文描述: 2M x 32-Bit Dynamic RAM Module
中文描述: 200萬(wàn)× 32位動(dòng)態(tài)隨機(jī)存儲(chǔ)器模塊
文件頁(yè)數(shù): 6/9頁(yè)
文件大?。?/td> 142K
代理商: HYM322160S
Semiconductor Group
556
DC Characteristics
1)
(cont’d)
Capacitance
T
A
= 0 to 70 C,
V
CC
= 5 V
±
10 %,
f
= 1 MHz
Parameter
Symbol
Limit Values
Unit
Test
Condition
min.
max.
Average
V
CC
supply current
during fast page mode
(RAS =
V
IL
, CAS, address cycling,
t
PC
=
t
PC
min)
-60 version
-70 version
I
CC4
560
560
mA
mA
2)
,
3)
Standby
V
CC
supply current
(RAS = CAS =
V
CC
– 0.2 V)
Average
V
CC
supply current
during CAS-before-RAS refresh mode
(RAS, CAS cycling,
t
RC
=
t
RC
min)
I
CC5
16
mA
-60 version
-70 version
I
CC6
880
800
mA
mA
2)
Parameter
Symbol
Limit Values
Unit
min.
max.
Input capacitance
(A0 to A9, WE)
C
I1
120
pF
Input capacitance
(RAS0-RAS2, CAS0-CAS3)
C
I2
40
pF
I/O capacitance
(DQ0-DQ31)
C
IO1
29
pF
HYM 322160S/GS-60/-70
2M x 32-Bit
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