參數(shù)資料
型號: HYM322160S
廠商: SIEMENS AG
英文描述: 2M x 32-Bit Dynamic RAM Module
中文描述: 200萬× 32位動態(tài)隨機存儲器模塊
文件頁數(shù): 2/9頁
文件大?。?/td> 142K
代理商: HYM322160S
Semiconductor Group
552
HYM 322160S/GS-60/-70
2M x 32-Bit
The HYM322160S/GS-60/-70 is a 8 MByte DRAM module organized as 2 097 152 words by
32-Bit in a 72-pin single-in-line package comprising sixteen HYB514400BJ 1M
×
4 DRAMs in 300
mil wide SOJ-packages mounted together with eight 0.2
μ
F ceramic decoupling capacitors on a PC
board.
The HYM322160S/GS-60/-70 can also be used as a 4 194 304 words by 16-Bits dynamic RAM
module by means of connecting DQ0 and DQ16, DQ1 and DQ17, DQ2 and DQ18, …, DQ15 and
DQ31, respectively.
Each HYB514400BJ is described in the data sheet and is fully electrical tested and processed
according to SIEMENS standard quality procedure prior to module assembly. After assembly onto
the board, a further set of electrical tests is performed.
The speed of the module can be detected by the use of four presence detect pins.
The common I/O feature on the HYM 322160S/GS-60/-70 dictates the use of early write cycles.
Pin Definitions and Functions
Presence Detect Pins
Pin No.
Function
A0-A9
Address Inputs
DQ0-DQ31
Data Input/Output
CAS0 - CAS3
Column Address Strobe
RAS0 - RAS3
Row Address Strobe
WE
V
CC
V
SS
PD
Read/Write Input
Power (+ 5 V)
Ground
Presence Detect Pin
N.C.
No Connection
-60
N.C.
-70
N.C.
PD0
PD1
N.C.
N.C.
V
SS
N.C.
PD2
N.C.
PD3
N.C.
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