參數(shù)資料
型號(hào): HYM321160S
廠商: SIEMENS AG
英文描述: 1M x 32-Bit Dynamic RAM Module
中文描述: 100萬(wàn)× 32位動(dòng)態(tài)隨機(jī)存儲(chǔ)器模塊
文件頁(yè)數(shù): 7/9頁(yè)
文件大小: 126K
代理商: HYM321160S
Semiconductor Group
547
AC Characteristics
4) 5)
T
A
= 0 to 70 C;
V
CC
= 5 V
±
10 %;
t
T
= 5 ns
.
Parameter
Symbol
Limit Values
Unit
HYM
321160S/GS-60
HYM
321160S/GS-70
min.
max.
min.
max.
Random read or write cycle time
t
RC
t
PC
t
RAC
t
CAC
t
AA
110
130
ns
Fast page mode cycle time
40
45
ns
Access time from RAS
6) 11) 12)
60
70
ns
Access time from CAS
6) 11)
15
20
ns
Access time from column address
6) 12)
30
35
ns
Access time from CAS precharge
6)
t
CPA
35
40
ns
CAS to output in low-Z
6)
t
CLZ
t
OFF
t
T
t
RP
t
RAS
t
RASP
0
0
ns
Output buffer turn-off delay
7)
0
20
0
20
ns
Transition time (rise and fall)
5)
3
50
3
50
ns
RAS precharge time
40
50
ns
RAS pulse width
60
10000
70
10000
ns
RAS pulse width
(fast page mode)
60
200000
70
200000
ns
CAS precharge to RAS delay
t
RHCP
t
RSH
t
CSH
t
CAS
t
RCD
t
RAD
35
40
ns
RAS hold time
15
20
ns
CAS hold time
60
70
ns
CAS pulse width
15
10000
20
10000
ns
RAS to CAS delay time
11)
20
45
20
50
ns
RAS to column address
delay time
12)
15
30
15
35
ns
CAS to RAS precharge time
t
CRP
t
CP
5
5
ns
CAS precharge time
(fast page mode)
10
10
ns
Row address setup time
t
ASR
t
RAH
t
ASC
t
CAH
0
0
ns
Row address hold time
10
10
ns
Column address setup time
0
0
ns
Column address hold time
15
15
ns
HYM 321160S/GS-60/-70
1M x 32-Bit
相關(guān)PDF資料
PDF描述
HYM321160S-70 1M x 32-Bit Dynamic RAM Module
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