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參數(shù)資料
| 型號： | HYM321160S |
| 廠商： | SIEMENS AG |
| 英文描述： | 1M x 32-Bit Dynamic RAM Module |
| 中文描述： | 100萬× 32位動態(tài)隨機存儲器模塊 |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 126K |
| 代理商： | HYM321160S |
Semiconductor Group
545
Absolute Maximum Ratings
Operating temperature range .........................................................................................0 to + 70 C
Storage temperature range......................................................................................– 55 to + 125 C
Soldering temperature ............................................................................................................ 260 C
Soldering time.............................................................................................................................10 s
Input/output voltage ........................................................................................................– 1 to + 7 V
Power supply voltage......................................................................................................– 1 to + 7 V
Power dissipation................................................................................................................... 6.16 W
Data out current (short circuit) ................................................................................................ 50 mA
Note
: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage to the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
1)
T
A
= 0 to 70 C;
V
CC
= 5 V
±
10 %
Parameter
Symbol
Limit Values
Unit
Test
Condition
min.
max.
Input high voltage
V
IH
V
IL
V
OH
V
OL
I
I(L)
2.4
5.5
V
–
Input low voltage
Output high voltage (
I
OUT
= – 5 mA)
Output low voltage (
I
OUT
= 4.2 mA)
Input leakage current
(0 V <
V
IN
< 6.5 V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V <
V
OUT
< 5.5 V)
Average
V
CC
supply current:
– 1.0
0.8
V
–
2.4
–
V
–
–
0.4
V
μ
A
–
– 20
20
–
I
O(L)
– 10
10
μ
A
–
-60 version
-70 version
(RAS, CAS, address cycling,
t
RC
=
t
RC
min.)
Standby
V
CC
supply current
(RAS = CAS =
V
IH
)
Average
V
CC
supply current during RAS
only refresh cycles:
I
CC1
–
–
880
800
mA
mA
2), 3)
I
CC2
–
16
mA
–
-60 version
-70 version
(RAS cycling, CAS =
V
IH
, t
RC
=
t
RC
min.)
I
CC3
–
–
880
800
mA
mA
2)
HYM 321160S/GS-60/-70
1M x 32-Bit
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYM321160S-70 | 1M x 32-Bit Dynamic RAM Module |
| HYM322005S-60 | 2M x 32-Bit Dynamic RAM Module |
| HYM322005S | 2M x 32-Bit Dynamic RAM Module |
| HYM322005S-50 | 2M x 32-Bit Dynamic RAM Module |
| HYM322005GS-50 | 2M x 32-Bit Dynamic RAM Module |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYM321160S-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 32-Bit Dynamic RAM Module |
| HYM321160S-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 32-Bit Dynamic RAM Module |
| HYM322000GS-50 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 Fast Page Mode DRAM Module |
| HYM322000GS-60 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 Fast Page Mode DRAM Module |
| HYM322000S-50 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 Fast Page Mode DRAM Module |
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