參數(shù)資料
型號(hào)： HYM321160GS-60
廠商： SIEMENS A G
元件分類： DRAM
英文描述： 1M x 32-Bit Dynamic RAM Module
中文描述： 1M X 32 FAST PAGE DRAM MODULE, 60 ns, SMA72
封裝： SIMM-72
文件頁(yè)數(shù)： 5/9頁(yè)
文件大?。?/td> 126K
代理商： HYM321160GS-60
Semiconductor Group
545
Absolute Maximum Ratings
Operating temperature range .........................................................................................0 to + 70 C
Storage temperature range......................................................................................– 55 to + 125 C
Soldering temperature ............................................................................................................ 260 C
Soldering time.............................................................................................................................10 s
Input/output voltage ........................................................................................................– 1 to + 7 V
Power supply voltage......................................................................................................– 1 to + 7 V
Power dissipation................................................................................................................... 6.16 W
Data out current (short circuit) ................................................................................................ 50 mA
Note
: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage to the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
1)
T
A
= 0 to 70 C;
V
CC
= 5 V
±
10 %
Parameter
Symbol
Limit Values
Unit
Test
Condition
min.
max.
Input high voltage
V
IH
V
IL
V
OH
V
OL
I
I(L)
2.4
5.5
V
–
Input low voltage
Output high voltage (
I
OUT
= – 5 mA)
Output low voltage (
I
OUT
= 4.2 mA)
Input leakage current
(0 V <
V
IN
< 6.5 V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V <
V
OUT
< 5.5 V)
Average
V
CC
supply current:
– 1.0
0.8
V
–
2.4
–
V
–
–
0.4
V
μ
A
–
– 20
20
–
I
O(L)
– 10
10
μ
A
–
-60 version
-70 version
(RAS, CAS, address cycling,
t
RC
=
t
RC
min.)
Standby
V
CC
supply current
(RAS = CAS =
V
IH
)
Average
V
CC
supply current during RAS
only refresh cycles:
I
CC1
–
–
880
800
mA
mA
2), 3)
I
CC2
–
16
mA
–
-60 version
-70 version
(RAS cycling, CAS =
V
IH
, t
RC
=
t
RC
min.)
I
CC3
–
–
880
800
mA
mA
2)
HYM 321160S/GS-60/-70
1M x 32-Bit
相關(guān)PDF資料
PDF描述
HYM321160S-60 1M x 32-Bit Dynamic RAM Module
HYM321160GS-70 1M x 32-Bit Dynamic RAM Module
HYM321160S 1M x 32-Bit Dynamic RAM Module
HYM321160S-70 1M x 32-Bit Dynamic RAM Module
HYM322005S-60 2M x 32-Bit Dynamic RAM Module
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYM321160GS-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 32-Bit Dynamic RAM Module
HYM321160S 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 32-Bit Dynamic RAM Module
HYM321160S-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 32-Bit Dynamic RAM Module
HYM321160S-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 32-Bit Dynamic RAM Module
HYM322000GS-50 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 Fast Page Mode DRAM Module
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