參數(shù)資料
型號: HYM321000S-50
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 1M x 32-Bit Dynamic RAM Module 2M x 16-Bit Dynamic RAM Module
中文描述: 1M X 32 FAST PAGE DRAM MODULE, 50 ns, SMA72
封裝: SIMM-72
文件頁數(shù): 8/10頁
文件大?。?/td> 80K
代理商: HYM321000S-50
Semiconductor Group
8
HYM 321000S/GS-50/-60
1M
×
32-Bit
Early Write Cycle
Write command hold time
t
WCH
t
WP
t
WCS
t
RWL
t
CWL
t
DS
t
DH
8
10
ns
Write command pulse width
8
10
ns
Write command setup time
0
0
ns
13
Write command to RAS lead time
13
15
ns
Write command to CAS lead time
13
15
ns
Data setup time
0
0
ns
14
Data hold time
10
10
ns
14
Fast Page Mode Cycle
Fast page mode cycle time
t
PC
t
CP
t
CPA
t
RAS
t
RHCP
35
40
ns
CAS precharge time
10
10
ns
Access time from CAS precharge
30
35
ns
7
RAS pulse width
50
200k
60
200k
ns
CAS precharge to RAS Delay
30
35
ns
CAS-before-RAS Refresh Cycle
CAS setup time
t
CSR
t
CHR
t
RPC
t
WRP
t
WRH
10
10
ns
CAS hold time
10
10
ns
RAS to CAS precharge time
5
5
ns
Write to RAS precharge time
10
10
ns
Write hold time referenced to RAS
10
10
ns
AC Characteristics
(cont’d)
5)6)
M16F
T
A
= 0 to 70 °C,
V
CC
= 5 V
±
10 %,
t
T
= 5 ns
Parameter
Symbol
Limit Values
Unit
Note
-50
-60
min.
max.
min.
max.
相關(guān)PDF資料
PDF描述
HYM321000GS-50 1M x 32-Bit Dynamic RAM Module 2M x 16-Bit Dynamic RAM Module
HYM321160GS-60 1M x 32-Bit Dynamic RAM Module
HYM321160S-60 1M x 32-Bit Dynamic RAM Module
HYM321160GS-70 1M x 32-Bit Dynamic RAM Module
HYM321160S 1M x 32-Bit Dynamic RAM Module
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