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參數(shù)資料
| 型號： | HYE18P32161AC-70 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | 32M Asynchronous/Page CellularRAM |
| 中文描述： | 32M的異步/頁的CellularRAM |
| 文件頁數(shù)： | 23/33頁 |
| 文件大?。?/td> | 641K |
| 代理商： | HYE18P32161AC-70 |
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Data Sheet
23
V2.0, 2003-12-16
HYE18P32161AC(-/L)70/85
32M Asynch/Page CellularRAM
Functional Description
2.5
Asynchronous Write
Writing to the device in asynchronous mode is accomplished by asserting the Chip Select (CS1) and Write Enable
(WE) signals to low. If the Upper Byte (UB) control line is set active low then the upper word (DQ15 to DQ8) of the
data bus is written to the specified memory location. If the Lower Byte (LB) control line is set active low then the
lower word (DQ7 to DQ0) of the data bus is written to the specified memory location. Write operation takes place
when either one or both UB and LB is asserted low. The data is latched by the rising edge of either CS1, WE, or
UB/LB whichever signal comes first.
Figure 12
Asynchronous Write - WE Controlled (OE =
V
IH
or
V
IL
, ZZ =
V
IH
)
Figure 13
Asynchronous Write - CS1 Controlled (OE =
V
IH
or
V
IL
, ZZ =
V
IH
)
Don't Care
A20-A0
ADDRESS
CS1
WE
UB, LB
DQx OUT
t
CW
t
WR
t
WC
t
WP
t
AW
t
BW
Data Valid
DQx IN
t
DW
t
DH
t
AS
t
WHZ
t
OW
t
WPH
Don't Care
A20-A0
ADDRESS
CS1
WE
UB, LB
DQx OUT
t
CW
t
WR
t
WC
t
WP
t
AW
t
BW
Data Valid
DQx IN
t
DW
t
DH
t
AS
t
WHZ
t
CPH
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| HYE25L256160AC-75 | SMP(M)PIN CONT,PCB REAR MNT |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYE18P32161AC-85 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:32M Asynchronous/Page CellularRAM |
| HYE18P32161ACL70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:32M Asynchronous/Page CellularRAM |
| HYE18P32161ACL85 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:32M Asynchronous/Page CellularRAM |
| HYE25L128160AC-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
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