參數(shù)資料
型號: HYB3166165BT-40
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 4M x 16-Bit Dynamic RAM
中文描述: 4M X 16 EDO DRAM, 40 ns, PDSO50
封裝: 0.400 INCH, PLASTIC, TSOP2-50
文件頁數(shù): 21/29頁
文件大?。?/td> 284K
代理商: HYB3166165BT-40
Semiconductor Group
21
HYB3164(5/6)165AT(L)-40/-50/-60
4M x 16 EDO-DRAM
Hyper Page Mode (EDO) Early Write Cycle
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RAL
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ASC
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WCS
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WP
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WCH
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CSH
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CAS
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RCD
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RAH
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ASR
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DH
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Column 1
Column 2
Row
Addr
Data In N
Data In 2
Data In 1
Column N
RAS
I/O (Input)
WE
Address
UCAS
LCAS
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
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“H” or “L”
VOH
VOL
OE
t
RAS
t
CRP
t
ASC
t
CWL
t
WCS
t
WP
t
WCH
t
CWL
t
WCS
t
WP
t
WCH
t
RWL
t
DH
t
DS
t
HPC
t
CAH
t
RAD
t
RHCP
t
ASC
WL8
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