參數(shù)資料
型號(hào)： HYB3166165BT-40
廠商： SIEMENS A G
元件分類(lèi)： DRAM
英文描述： 4M x 16-Bit Dynamic RAM
中文描述： 4M X 16 EDO DRAM, 40 ns, PDSO50
封裝： 0.400 INCH, PLASTIC, TSOP2-50
文件頁(yè)數(shù)： 2/29頁(yè)
文件大小： 284K
代理商： HYB3166165BT-40
Semiconductor Group
2
HYB3164(5/6)165AT(L)-40/-50/-60
4M x 16 EDO-DRAM
This device is a 64 MBit dynamic RAM organized 4 194 304 x 16 bits. The device is fabricated on
an advanced first generation 64Mbit 0,35
μ
m CMOS silicon gate process technology. The circuit
and process design allow this device to achieve high performance and low power dissipation. The
HYB3164(5)165AT operates with a single 3.3 +/-0.3V power supply and interfaces with either
LVTTL or LVCMOS levels. Multiplexed address inputs permit the HYB3164(5/6)165AT to be
packaged in 400mil wide TSOPII-50 package. These packages provide high system bit densities
and are compatible with commonly used automatic testing and insertion equipment. The
HYB3164(5/6)165ATL parts have a very low power sleep mode“ supported by Self Refresh.
Ordering Information
Type
Ordering
Code
Package
Descriptions
8k-refresh versions:
HYB 3164165AT-40
P-TSOPII-50 400 mil
EDO-DRAM (access time 40 ns)
HYB 3164165AT-50
P-TSOPII-50 400 mil
EDO-DRAM (access time 50 ns)
HYB 3164165AT-60
P-TSOPII-50 400 mil
EDO-DRAM (access time 60 ns)
HYB 3164165ATL-50
P-TSOPII-50 400 mil
EDO-DRAM (access time 50 ns)
HYB 3164165ATL-60
P-TSOPII-50 400 mil
EDO-DRAM (access time 60 ns)
4k-refresh versions:
HYB 3165165AT-40
P-TSOPII-50 400 mil
EDO-DRAM (access time 40 ns)
HYB 3165165AT-50
P-TSOPII-50 400 mil
EDO-DRAM (access time 50 ns)
HYB 3165165AT-60
P-TSOPII-50 400 mil
EDO-DRAM (access time 60 ns)
HYB 3165165ATL-50
P-TSOPII-50 400 mil
EDO-DRAM (access time 50 ns)
HYB 3165165ATL-60
P-TSOPII-50 400 mil
EDO-DRAM (access time 60 ns)
2k-refresh versions:
HYB 3166165AT-40
P-TSOPII-50 400 mil
EDO-DRAM (access time 40 ns)
HYB 3166165AT-50
P-TSOPII-50 400 mil
EDO-DRAM (access time 50 ns)
HYB 3166165AT-60
P-TSOPII-50 400 mil
EDO-DRAM (access time 60 ns)
HYB 3166165ATL-50
P-TSOPII-50 400 mil
EDO-DRAM (access time 50 ns)
HYB 3166165ATL-60
P-TSOPII-50 400 mil
EDO-DRAM (access time 60 ns)
相關(guān)PDF資料
PDF描述
HYB3165165T-50 4M x 16-Bit Dynamic RAM
HYB3164165BTL-60 INDUCTOR CHIP .10UH 5% 0805 SMD
HYB3165165BTL-60 4M x 16-Bit Dynamic RAM
HYB3166165BTL-60 4M x 16-Bit Dynamic RAM
HYB3164165TL-50 4M x 16-Bit Dynamic RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB3166165BT-50 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM
HYB3166165BT-60 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM
HYB3166165BTL-50 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM
HYB3166165BTL-60 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM
HYB35C05 制造商:SEPA 功能描述:FAN 35MM 5VDC 制造商:SEPA 功能描述:FAN, 35MM, 5VDC 制造商:SEPA 功能描述:FAN, 35MM, 5VDC, Frame Dimensions:35mm x 35mm x 7.5mm, Supply Voltage:5VDC, Curr
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